Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
BSP373NH6327XTSA1
RFQ
VIEW
RFQ
3,335
In-stock
Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 100V 1.8A (Ta) 240 mOhm @ 1.8A, 10V 4V @ 218µA 9.3nC @ 10V 265pF @ 25V 10V ±20V
TSM950N10CW RPG
RFQ
VIEW
RFQ
2,030
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 100V 6.5A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 9W (Tc) N-Channel 100V 6.5A (Tc) 95 mOhm @ 5A, 10V 2.5V @ 250µA 9.3nC @ 10V 1480pF @ 50V 4.5V, 10V ±20V
TSM900N10CP ROG
RFQ
VIEW
RFQ
2,434
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 100V 15A TO252 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 50W (Tc) N-Channel 100V 15A (Tc) 90 mOhm @ 5A, 10V 2.5V @ 250µA 9.3nC @ 10V 1480pF @ 50V 4.5V, 10V ±20V