- Operating Temperature :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
2,767
In-stock
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Renesas Electronics America | MOSFET N-CH 100V 25A LFPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 30W (Tc) | N-Channel | - | 100V | 25A (Ta) | 15 mOhm @ 12.5A, 10V | 6V @ 20mA | 61nC @ 10V | 4350pF @ 10V | 8V, 10V | ±20V | |||
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VIEW |
3,499
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 19A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.7W (Ta), 150W (Tc) | P-Channel | - | 100V | 19A (Tc) | 200 mOhm @ 11A, 10V | 4V @ 250µA | 61nC @ 10V | 1400pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,168
In-stock
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Infineon Technologies | MOSFET N-CH 100V 6.9A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 6.9A (Ta) | 26 mOhm @ 4.1A, 10V | 5.5V @ 250µA | 61nC @ 10V | 3180pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,207
In-stock
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STMicroelectronics | MOSFET N-CH 100V 80A DPAK | STripFET™ F7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 120W (Tc) | N-Channel | - | 100V | 80A (Tc) | 8 mOhm @ 40A, 10V | 4.5V @ 250µA | 61nC @ 10V | 4369pF @ 50V | 10V | ±20V | |||
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VIEW |
3,486
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 47A D2PAK | TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 150W (Tc) | N-Channel | - | 100V | 47A (Tc) | 25 mOhm @ 25A, 10V | 4V @ 1mA | 61nC @ 10V | 2600pF @ 25V | 10V | ±20V | |||
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VIEW |
2,134
In-stock
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STMicroelectronics | MOSFET N CH 100V 80A DPAK | DeepGATE™, STripFET™ VII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 120W (Tc) | N-Channel | - | 100V | 80A (Tc) | 8 mOhm @ 40A, 10V | 4.5V @ 250µA | 61nC @ 10V | 4369pF @ 50V | 10V | ±20V | |||
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VIEW |
2,882
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 47A DPAK | TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 150W (Tc) | N-Channel | - | 100V | 47A (Tc) | 25 mOhm @ 25A, 10V | 4V @ 1mA | 61nC @ 10V | 2600pF @ 25V | 10V | ±20V | |||
