Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PHB47NQ10T,118
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699
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Nexperia USA Inc. MOSFET N-CH 100V 47A D2PAK TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 166W (Tc) N-Channel 100V 47A (Tc) 28 mOhm @ 25A, 10V 4V @ 1mA 66nC @ 10V 3100pF @ 25V 10V ±20V
SIR846ADP-T1-GE3
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1,169
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Vishay Siliconix MOSFET N-CH 100V 60A PPAK SO-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 5.4W (Ta), 83W (Tc) N-Channel 100V 60A (Tc) 7.8 mOhm @ 20A, 10V 3V @ 250µA 66nC @ 10V 2350pF @ 50V 6V, 10V ±20V
IPB70N10S312ATMA1
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RFQ
2,480
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Infineon Technologies MOSFET N-CH 100V 70A TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 125W (Tc) N-Channel 100V 70A (Tc) 11.3 mOhm @ 70A, 10V 4V @ 83µA 66nC @ 10V 4355pF @ 25V 10V ±20V
NVD6824NLT4G-VF01
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2,747
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ON Semiconductor MOSFET N-CH 100V 40A DPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 3.9W (Ta), 90W (Tc) N-Channel 100V 8.5A (Ta), 41A (Tc) 20 mOhm @ 20A, 10V 2.5V @ 250µA 66nC @ 10V 3468pF @ 25V 4.5V, 10V ±20V