Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRF510STRRPBF
RFQ
VIEW
RFQ
2,981
In-stock
Vishay Siliconix MOSFET N-CH 100V 5.6A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 3.7W (Ta), 43W (Tc) N-Channel 100V 5.6A (Tc) 540 mOhm @ 3.4A, 10V 4V @ 250µA 8.3nC @ 10V 180pF @ 25V 10V ±20V
DMN10H220L-13
RFQ
VIEW
RFQ
2,936
In-stock
Diodes Incorporated MOSFET N-CH 100V 1.6A SOT23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 1.3W (Ta) N-Channel 100V 1.4A (Ta) 220 mOhm @ 1.6A, 10V 2.5V @ 250µA 8.3nC @ 10V 401pF @ 25V 4.5V, 10V ±16V
IRFL110TRPBF
RFQ
VIEW
RFQ
2,445
In-stock
Vishay Siliconix MOSFET N-CH 100V 1.5A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2W (Ta), 3.1W (Tc) N-Channel 100V 1.5A (Tc) 540 mOhm @ 900mA, 10V 4V @ 250µA 8.3nC @ 10V 180pF @ 25V 10V ±20V
IRF510STRLPBF
RFQ
VIEW
RFQ
3,588
In-stock
Vishay Siliconix MOSFET N-CH 100V 5.6A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB - 43W (Tc) N-Channel 100V 5.6A (Tc) 540 mOhm @ 3.4A, 10V 4V @ 250µA 8.3nC @ 10V 180pF @ 25V 10V ±20V
IRFR110TRLPBF
RFQ
VIEW
RFQ
1,553
In-stock
Vishay Siliconix MOSFET N-CH 100V 4.3A DPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 - 25W (Tc) N-Channel 100V 4.3A (Tc) 540 mOhm @ 2.6A, 10V 4V @ 250µA 8.3nC @ 10V 180pF @ 25V 10V ±20V
DMN10H220LE-13
RFQ
VIEW
RFQ
2,806
In-stock
Diodes Incorporated MOSFET N-CH 100V 2.3A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.8W (Ta) N-Channel 100V 2.3A (Ta) 220 mOhm @ 1.6A, 10V 2.5V @ 250µA 8.3nC @ 10V 401pF @ 25V 4.5V, 10V ±20V
DMN10H220L-7
RFQ
VIEW
RFQ
1,220
In-stock
Diodes Incorporated MOSFET N-CH 100V 1.6A SOT-23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 1.3W (Ta) N-Channel 100V 1.4A (Ta) 220 mOhm @ 1.6A, 10V 2.5V @ 250µA 8.3nC @ 10V 401pF @ 25V 4.5V, 10V ±16V
IRFR110TRPBF
RFQ
VIEW
RFQ
2,996
In-stock
Vishay Siliconix MOSFET N-CH 100V 4.3A DPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 25W (Tc) N-Channel 100V 4.3A (Tc) 540 mOhm @ 2.6A, 10V 4V @ 250µA 8.3nC @ 10V 180pF @ 25V 10V ±20V