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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRF9510SPBF	RFQ VIEW	PDF RFQ	1,041 In-stock	Vishay Siliconix	MOSFET P-CH 100V 4A D2PAK		-	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	-	43W (Tc)	P-Channel	100V	4A (Tc)	1.2 Ohm @ 2.4A, 10V	4V @ 250µA	8.7nC @ 10V	200pF @ 25V	10V	±20V
	IRF9510STRLPBF	RFQ VIEW	PDF RFQ	832 In-stock	Vishay Siliconix	MOSFET P-CH 100V 4A D2PAK		-	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.7W (Ta), 43W (Tc)	P-Channel	100V	4A (Tc)	1.2 Ohm @ 2.4A, 10V	4V @ 250µA	8.7nC @ 10V	200pF @ 25V	10V	±20V
	IRFR9110TRPBF	RFQ VIEW	PDF RFQ	1,588 In-stock	Vishay Siliconix	MOSFET P-CH 100V 3.1A DPAK		-	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	2.5W (Ta), 25W (Tc)	P-Channel	100V	3.1A (Tc)	1.2 Ohm @ 1.9A, 10V	4V @ 250µA	8.7nC @ 10V	200pF @ 25V	10V	±20V
	IRFL9110TRPBF	RFQ VIEW	PDF RFQ	3,881 In-stock	Vishay Siliconix	MOSFET P-CH 100V 1.1A SOT223		-	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223	2W (Ta), 3.1W (Tc)	P-Channel	100V	1.1A (Tc)	1.2 Ohm @ 660mA, 10V	4V @ 250µA	8.7nC @ 10V	200pF @ 25V	10V	±20V

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