- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,218
In-stock
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Infineon Technologies | MOSFET N-CH 100V 13A TO252-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 31W (Tc) | N-Channel | - | 100V | 13A (Tc) | 78 mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | 716pF @ 50V | 10V | ±20V | |||
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VIEW |
3,809
In-stock
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ON Semiconductor | MOSFET N-CH 100V POWER56 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 2.5W (Ta), 48W (Tc) | N-Channel | - | 100V | 6A (Ta), 26A (Tc) | 34 mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | 645pF @ 50V | 6V, 10V | ±20V | |||
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VIEW |
3,479
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 3.8A 8-SOIC | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.4W (Ta), 4.8W (Tc) | N-Channel | - | 100V | 3.8A (Tc) | 158 mOhm @ 2.7A, 10V | 4V @ 250µA | 11nC @ 10V | 370pF @ 50V | 6V, 10V | ±20V | |||
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VIEW |
3,337
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 9.4A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 100V | 9.4A (Tc) | 33 mOhm @ 4.7A, 10V | 4V @ 100µA | 11nC @ 10V | 880pF @ 50V | 10V | ±20V | |||
