Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPD068N10N3GATMA1
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3,855
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Infineon Technologies MOSFET N-CH 100V 90A OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 150W (Tc) N-Channel 100V 90A (Tc) 6.8 mOhm @ 90A, 10V 3.5V @ 90µA 68nC @ 10V 4910pF @ 50V 6V, 10V ±20V
BSC123N10LSGATMA1
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2,303
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Infineon Technologies MOSFET N-CH 100V 71A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 114W (Tc) N-Channel 100V 10.6A (Ta), 71A (Tc) 12.3 mOhm @ 50A, 10V 2.4V @ 72µA 68nC @ 10V 4900pF @ 50V 4.5V, 10V ±20V
BSC060N10NS3GATMA1
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3,854
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Infineon Technologies MOSFET N-CH 100V 90A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 125W (Tc) N-Channel 100V 14.9A (Ta), 90A (Tc) 6 mOhm @ 50A, 10V 3.5V @ 90µA 68nC @ 10V 4900pF @ 50V 6V, 10V ±20V
ATP405-TL-H
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2,824
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ON Semiconductor MOSFET N-CH 100V 40A ATPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount ATPAK (2 leads+tab) ATPAK 70W (Tc) N-Channel 100V 40A (Ta) 33 mOhm @ 20A, 10V - 68nC @ 10V 4000pF @ 20V 10V ±20V