Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSC252N10NSFGATMA1
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3,606
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Infineon Technologies MOSFET N-CH 100V 40A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 78W (Tc) N-Channel 100V 7.2A (Ta), 40A (Tc) 25.2 mOhm @ 20A, 10V 4V @ 43µA 17nC @ 10V 1100pF @ 50V 10V ±20V
SI7810DN-T1-E3
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2,575
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Vishay Siliconix MOSFET N-CH 100V 3.4A 1212-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 1.5W (Ta) N-Channel 100V 3.4A (Ta) 62 mOhm @ 5.4A, 10V 4.5V @ 250µA 17nC @ 10V - 6V, 10V ±20V
FDM3622
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1,356
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ON Semiconductor MOSFET N-CH 100V 4.4A 8MLP PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN 8-MLP (3.3x3.3) 2.1W (Ta) N-Channel 100V 4.4A (Ta) 60 mOhm @ 4.4A, 10V 4V @ 250µA 17nC @ 10V 1090pF @ 25V 6V, 10V ±20V
ZXMN10A25GTA
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2,685
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Diodes Incorporated MOSFET N-CH 100V 2.9A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2W (Ta) N-Channel 100V 2.9A (Ta) 125 mOhm @ 2.9A, 10V 4V @ 250µA 17nC @ 10V 859pF @ 50V 10V ±20V