- Manufacture :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,500
In-stock
|
Diodes Incorporated | MOSFET N-CH 100V 55A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 2W (Ta) | N-Channel | - | 100V | 55A (Tc) | 28 mOhm @ 20A, 10V | 3.3V @ 250µA | 36nC @ 10V | 2245pF @ 50V | 10V | ±20V | |||
|
VIEW |
617
In-stock
|
Texas Instruments | MOSFET N-CH 100V 100A 8SON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-VSONP (5x6) | 3.3W (Ta), 125W (Tc) | N-Channel | - | 100V | 100A (Tc) | 6.4 mOhm @ 16A, 10V | 3.3V @ 250µA | 48nC @ 10V | 3870pF @ 50V | 6V, 10V | ±20V | |||
|
VIEW |
1,919
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 19.7A 8SOIC | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3.5W (Ta), 7.8W (Tc) | N-Channel | - | 100V | 19.7A (Tc) | 10 mOhm @ 15A, 10V | 3.3V @ 250µA | 69nC @ 10V | 2410pF @ 50V | 6V, 10V | ±20V | |||
|
|
VIEW |
2,980
In-stock
|
Texas Instruments | MOSFET N-CH 100V 100A 8SON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-VSONP (5x6) | 3.3W (Ta), 125W (Tc) | N-Channel | - | 100V | 100A (Ta) | 6.4 mOhm @ 16A, 10V | 3.3V @ 250µA | 48nC @ 10V | 3870pF @ 50V | 6V, 10V | ±20V | |||
