- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
714
In-stock
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ON Semiconductor | MOSFET N-CH 100V 32A DPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 100V | 32A (Tc) | 37 mOhm @ 32A, 10V | 4V @ 250µA | 40nC @ 10V | 1450pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,807
In-stock
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Vishay Siliconix | MOSFET N-CH 100V POWERPAK SO8L | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 83W (Tc) | N-Channel | - | 100V | 32A (Tc) | 11 mOhm @ 10A, 10V | 2.5V @ 250µA | 51nC @ 10V | 2289pF @ 40V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,342
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 32A PPAK SO-8 | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 83W (Tc) | N-Channel | - | 100V | 32A (Tc) | 26 mOhm @ 9.3A, 10V | 3.5V @ 250µA | 63nC @ 10V | 3342pF @ 25V | 6V, 10V | ±20V | |||
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|
VIEW |
3,318
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 100V 32A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 83.3W (Tc) | N-Channel | - | 100V | 32A (Tc) | 37 mOhm @ 10A, 10V | 3V @ 250µA | 34nC @ 10V | 1598pF @ 30V | 4.5V, 10V | ±20V | |||
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VIEW |
3,111
In-stock
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Infineon Technologies | MOSFET N-CH 100V 32A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 130W (Tc) | N-Channel | - | 100V | 32A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,971
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 32A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 86W (Tc) | N-Channel | - | 100V | 32A (Tc) | 34.5 mOhm @ 15A, 10V | 4V @ 1mA | 23.8nC @ 10V | 1201pF @ 50V | 10V | ±20V | |||
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|
VIEW |
2,442
In-stock
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STMicroelectronics | MOSFET N-CH 100V 35A DPAK | DeepGATE™, STripFET™ VII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 50W (Tc) | N-Channel | - | 100V | 32A (Tc) | 24 mOhm @ 16A, 10V | 4.5V @ 250µA | 19nC @ 10V | 1270pF @ 50V | 10V | 20V | |||
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VIEW |
3,197
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 32A 8-SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 61W (Tc) | N-Channel | - | 100V | 32A (Tc) | 8.8 mOhm @ 16A, 10V | 4V @ 500µA | 33nC @ 10V | 2800pF @ 50V | 10V | ±20V | |||
