Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AUIRF5210STRL
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1,533
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Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
IRF5210STRLPBF
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3,573
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Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
FDMS36101L-F085
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928
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ON Semiconductor MOSFET N-CH 100V 38A 8-MLP Automotive, AEC-Q101, PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN Power56 94W (Tc) N-Channel - 100V 38A (Tc) 26 mOhm @ 20A, 10V 3V @ 250µA 84nC @ 10V 3945pF @ 25V 4.5V, 10V ±20V
SQD40P10-40L_GE3
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RFQ
2,784
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Vishay Siliconix MOSFET P-CHAN 100V TO252 Automotive, AEC-Q101, TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 136W (Tc) P-Channel - 100V 38A (Tc) 40 mOhm @ 8.2A, 10V 2.5V @ 250µA 144nC @ 10V 5540pF @ 15V 4.5V, 10V ±20V