Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PHT6NQ10T,135
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3,704
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Nexperia USA Inc. MOSFET N-CH 100V 3A SOT223 TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.8W (Ta), 8.3W (Tc) N-Channel 100V 3A (Ta) 90 mOhm @ 3A, 10V 4V @ 1mA 21nC @ 10V 633pF @ 25V 10V ±20V
CZDM1003N TR
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948
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Central Semiconductor Corp MOSFET N-CH 100V 3A SOT-223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2W (Ta) N-Channel 100V 3A (Ta) 150 mOhm @ 2A, 10V 4V @ 250µA 15nC @ 10V 975pF @ 25V 10V 20V
ZXMP10A16KTC
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3,830
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Diodes Incorporated MOSFET P-CH 100V 3A DPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3 2.15W (Ta) P-Channel 100V 3A (Ta) 235 mOhm @ 2.1A, 10V 4V @ 250µA 16.5nC @ 10V 717pF @ 50V 6V, 10V ±20V