- Manufacture :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,468
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 11A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 54W (Tc) | N-Channel | 100V | 11A (Tc) | 173 mOhm @ 5A, 10V | 2V @ 1mA | - | 619pF @ 25V | 5V, 10V | ±15V | |||
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VIEW |
957
In-stock
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Infineon Technologies | MOSFET N-CH 100V 6PQFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-PQFN (2x2) | 11.5W (Tc) | N-Channel | 100V | 11A (Tc) | 42 mOhm @ 6.7A, 10V | 2.3V @ 10µA | 5.6nC @ 4.5V | 440pF @ 50V | 4.5V, 10V | ±20V |