- Technology :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,358
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 1A SOT-89 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | SOT-89-3 | 1.5W (Ta) | N-Channel | - | 100V | 1A (Ta) | 700 mOhm @ 1.5A, 10V | 4V @ 250µA | 2.9nC @ 10V | 138pF @ 50V | 6V, 10V | ±20V | |||
|
VIEW |
1,891
In-stock
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Rohm Semiconductor | MOSFET N-CH 100V 1.0A TSMT3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-96 | TSMT3 | 540mW (Ta) | N-Channel | - | 100V | 1A (Ta) | 520 mOhm @ 1A, 10V | 2.5V @ 1mA | 3.5nC @ 5V | 140pF @ 25V | 4V, 10V | ±20V | |||
|
VIEW |
3,200
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 100V 1A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3L | 1.4W (Ta) | N-Channel | - | 100V | 1A (Ta) | 630 mOhm @ 1A, 10V | 2.9V @ 250µA | 6nC @ 10V | 100pF @ 50V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,493
In-stock
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ON Semiconductor | MOSFET N-CH 100V 1A CPH3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3-CPH | 1W (Ta) | N-Channel | - | 100V | 1A (Ta) | 785 mOhm @ 1A, 10V | 2.6V @ 1mA | 3.4nC @ 10V | 155pF @ 20V | 4V, 10V | ±20V | |||
|
VIEW |
2,681
In-stock
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EPC | TRANS GAN 100V 1A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 1A (Ta) | 65 mOhm @ 1A, 5V | 2.5V @ 600µA | 0.91nC @ 5V | 90pF @ 50V | 5V | +6V, -4V | |||
