- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,438
In-stock
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Diodes Incorporated | MOSFETN-CH 100VPOWERDI5060-8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.2W (Ta) | N-Channel | - | 100V | 10.7A (Ta), 113A (Tc) | 8.8 mOhm @ 13A, 10V | 4V @ 250µA | 56.4nC @ 10V | 4.468nF @ 50V | 6V, 10V | ±20V | |||
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VIEW |
1,094
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 8.3A | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.2W (Ta) | N-Channel | - | 100V | 8.3A (Ta) | 16 mOhm @ 20A, 10V | 3.5V @ 250µA | 33.3nC @ 10V | 1871pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
695
In-stock
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Central Semiconductor Corp | MOSFET N-CH 100V 2A SOT-89 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 | 1.2W (Ta) | N-Channel | - | 100V | 2A (Ta) | 300 mOhm @ 2A, 10V | 2.5V @ 250µA | 6nC @ 5V | 550pF @ 25V | 4.5V, 10V | 20V | |||
|
VIEW |
3,239
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 2.6A TSOT26 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 | 1.2W (Ta) | N-Channel | - | 100V | 2.6A (Ta) | 160 mOhm @ 5A, 10V | 3V @ 250µA | 9.7nC @ 10V | 1167pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
913
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 2.6A TSOT26 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 | 1.2W (Ta) | N-Channel | - | 100V | 2.6A (Ta) | 160 mOhm @ 5A, 10V | 3V @ 250µA | 9.7nC @ 10V | 1167pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,314
In-stock
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Toshiba Semiconductor and Storage | SMALL-SIGNAL NCH MOSFET SOT23F Q | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1.2W (Ta) | N-Channel | - | 100V | 3.5A (Ta) | 69 mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | 430pF @ 15V | 4.5V, 10V | ±20V | |||
