Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSS123L
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RFQ
974
In-stock
ON Semiconductor MOSFET N-CH 100V 0.17A SOT-23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 360mW (Ta) N-Channel - 100V 170mA (Ta) 6 Ohm @ 170mA, 10V 2V @ 1mA 2.5nC @ 10V 21.5pF @ 25V 4.5V, 10V ±20V
BSS169H6327XTSA1
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VIEW
RFQ
865
In-stock
Infineon Technologies MOSFET N-CH 100V 170MA SOT23 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 360mW (Ta) N-Channel Depletion Mode 100V 170mA (Ta) 6 Ohm @ 170mA, 10V 1.8V @ 50µA 2.8nC @ 7V 68pF @ 25V 0V, 10V ±20V
BSS123TA
RFQ
VIEW
RFQ
3,264
In-stock
Diodes Incorporated MOSFET N-CH 100V 170MA SOT23-3 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 360mW (Ta) N-Channel - 100V 170mA (Ta) 6 Ohm @ 100mA, 10V 2.8V @ 1mA - 20pF @ 25V 4.5V, 10V ±20V
VP2110K1-G
RFQ
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RFQ
1,378
In-stock
Microchip Technology MOSFET P-CH 100V 0.12A SOT23-3 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 360mW (Ta) P-Channel - 100V 120mA (Tj) 12 Ohm @ 500mA, 10V 3.5V @ 1mA - 60pF @ 25V 5V, 10V ±20V
BSS123
RFQ
VIEW
RFQ
3,145
In-stock
ON Semiconductor MOSFET N-CH 100V 170MA SOT-23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 360mW (Ta) N-Channel - 100V 170mA (Ta) 6 Ohm @ 170mA, 10V 2V @ 1mA 2.5nC @ 10V 73pF @ 25V 4.5V, 10V ±20V