Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SUP85N10-10-GE3
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2,464
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Vishay Siliconix MOSFET N-CH 100V 85A TO220AB TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 - 3.75W (Ta), 250W (Tc) N-Channel - 100V 85A (Tc) 10.5 mOhm @ 30A, 10V 3V @ 250µA 160nC @ 10V 6550pF @ 25V 4.5V, 10V ±20V
ZVN2110ASTZ
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2,885
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Diodes Incorporated MOSFET N-CH 100V 320MA TO92-3 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole E-Line-3 E-Line (TO-92 compatible) 700mW (Ta) N-Channel - 100V 320mA (Ta) 4 Ohm @ 1A, 10V 2.4V @ 1mA - 75pF @ 25V 10V ±20V
SUP85N10-10-E3
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989
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Vishay Siliconix MOSFET N-CH 100V 85A TO220AB TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 3.75W (Ta), 250W (Tc) N-Channel - 100V 85A (Tc) 10.5 mOhm @ 30A, 10V 3V @ 250µA 160nC @ 10V 6550pF @ 25V 4.5V, 10V ±20V
ZVNL110ASTZ
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1,611
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Diodes Incorporated MOSFET N-CH 100V 320MA TO92-3 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole E-Line-3 E-Line (TO-92 compatible) 700mW (Ta) N-Channel - 100V 320mA (Ta) 3 Ohm @ 500mA, 10V 1.5V @ 1mA - 75pF @ 25V 5V, 10V ±20V
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3,201
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Vishay Siliconix MOSFET P-CH 100V 120A TO220AB TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 375W (Tc) P-Channel - 100V 120A (Tc) - 2.5V @ 250µA 190nC @ 10V 7000pF @ 50V 4.5V, 10V ±20V