- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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13 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,972
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 60A SOP ADV | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 78W (Tc) | N-Channel | - | 100V | 60A (Tc) | 4.5 mOhm @ 30A, 10V | 4V @ 1mA | 58nC @ 10V | 5200pF @ 50V | 10V | ±20V | |||
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661
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 55A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 157W (Tc) | N-Channel | - | 100V | 55A (Ta) | 6.5 mOhm @ 27.5A, 10V | 4V @ 500µA | 49nC @ 10V | 3280pF @ 10V | 10V | ±20V | |||
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3,469
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 7A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 50W (Tc) | N-Channel | - | 100V | 7A (Ta) | 48 mOhm @ 3.5A, 10V | 4V @ 100µA | 7.1nC @ 10V | 470pF @ 10V | 10V | ±20V | |||
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2,875
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 17A 8TSON-ADV | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 100V | 17A (Tc) | 16 mOhm @ 8.5A, 10V | 4V @ 200µA | 19nC @ 10V | 1600pF @ 50V | 10V | ±20V | |||
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VIEW |
725
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 33A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 125W (Tc) | N-Channel | - | 100V | 33A (Ta) | 9.7 mOhm @ 16.5A, 10V | 4V @ 500µA | 28nC @ 10V | 2050pF @ 10V | 10V | ±20V | |||
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1,465
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 24A 8-SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 48W (Tc) | N-Channel | - | 100V | 24A (Tc) | 13.6 mOhm @ 12A, 10V | 4V @ 300µA | 22nC @ 10V | 1900pF @ 50V | 10V | ±20V | |||
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VIEW |
2,468
In-stock
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Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C | Surface Mount | 3-SMD, Flat Leads | UFM | 1.8W (Ta) | N-Channel | - | 100V | 3.5A (Ta) | 69 mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | 430pF @ 15V | 4.5V, 10V | ±20V | |||
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2,922
In-stock
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Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2.5W (Ta) | N-Channel | - | 100V | 3.5A (Ta) | 69 mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | 430pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
3,637
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 92A 8DSOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 800mW (Ta), 142W (Tc) | N-Channel | - | 100V | 92A (Tc) | 4.5 mOhm @ 46A, 10V | 4V @ 1mA | 58nC @ 10V | 5200pF @ 50V | 10V | ±20V | |||
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VIEW |
2,518
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 65A D2PAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 156W (Tc) | N-Channel | - | 100V | 65A (Ta) | 4.5 mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | 5400pF @ 50V | 10V | ±20V | |||
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VIEW |
1,314
In-stock
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Toshiba Semiconductor and Storage | SMALL-SIGNAL NCH MOSFET SOT23F Q | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1.2W (Ta) | N-Channel | - | 100V | 3.5A (Ta) | 69 mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | 430pF @ 15V | 4.5V, 10V | ±20V | |||
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3,197
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 32A 8-SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 61W (Tc) | N-Channel | - | 100V | 32A (Tc) | 8.8 mOhm @ 16A, 10V | 4V @ 500µA | 33nC @ 10V | 2800pF @ 50V | 10V | ±20V | |||
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VIEW |
3,337
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 9.4A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 100V | 9.4A (Tc) | 33 mOhm @ 4.7A, 10V | 4V @ 100µA | 11nC @ 10V | 880pF @ 50V | 10V | ±20V |