- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,160
In-stock
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Infineon Technologies | MOSFET P-CH 100V 4.2A TO252-3 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 38W (Tc) | P-Channel | - | 100V | 4.2A (Tc) | 850 mOhm @ 3A, 10V | 2V @ 380µA | 16nC @ 10V | 372pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,738
In-stock
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Infineon Technologies | MOSFET P-CH 100V 1A SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 100V | 1A (Tc) | 800 mOhm @ 1A, 10V | 1V @ 380µA | 16.5nC @ 10V | 372pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
865
In-stock
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Infineon Technologies | MOSFET N-CH 100V 170MA SOT23 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 360mW (Ta) | N-Channel | Depletion Mode | 100V | 170mA (Ta) | 6 Ohm @ 170mA, 10V | 1.8V @ 50µA | 2.8nC @ 7V | 68pF @ 25V | 0V, 10V | ±20V | |||
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VIEW |
3,079
In-stock
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Infineon Technologies | MOSFET P-CH 100V 360MA SC-59-3 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SC-59 | 500mW (Tc) | P-Channel | - | 100V | 360mA (Ta) | 1.8 Ohm @ 360mA, 10V | 1V @ 170µA | 7nC @ 10V | 165pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,314
In-stock
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Infineon Technologies | MOSFET P-CH 100V 15A TO252-3 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 128W (Tc) | P-Channel | - | 100V | 15A (Tc) | 200 mOhm @ 11.3A, 10V | 2V @ 1.54mA | 62nC @ 10V | 1490pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,133
In-stock
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Infineon Technologies | MOSFET P-CH 100V 0.68A SOT223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 100V | 680mA (Ta) | 1.8 Ohm @ 680mA, 10V | 2V @ 170µA | 6.4nC @ 10V | 146pF @ 25V | 4.5V, 10V | ±20V | |||
