- Operating Temperature :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
16 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,678
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 31A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 3W (Ta), 110W (Tc) | N-Channel | - | 100V | 31A (Tc) | 39 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1690pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,222
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 17A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | - | 100V | 17A (Tc) | 105 mOhm @ 10A, 10V | 2V @ 250µA | 34nC @ 5V | 800pF @ 25V | 4V, 10V | ±16V | |||
|
|
VIEW |
679
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 17A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | - | 100V | 17A (Tc) | 105 mOhm @ 10A, 10V | 2V @ 250µA | 34nC @ 5V | 800pF @ 25V | 4V, 10V | ±16V | |||
|
|
VIEW |
1,685
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 16A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | - | 100V | 16A (Tc) | 115 mOhm @ 10A, 10V | 4V @ 250µA | 44nC @ 10V | 640pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,229
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 9.4A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 48W (Tc) | N-Channel | - | 100V | 9.4A (Tc) | 210 mOhm @ 5.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,111
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 32A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 130W (Tc) | N-Channel | - | 100V | 32A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,390
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 42A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 140W (Tc) | N-Channel | - | 100V | 42A (Tc) | 18 mOhm @ 33A, 10V | 4V @ 250µA | 100nC @ 10V | 2930pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,417
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 35W (Tc) | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,240
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 6.6A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 40W (Tc) | P-Channel | - | 100V | 6.6A (Tc) | 480 mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,553
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 31A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 3W (Ta), 110W (Tc) | N-Channel | - | 100V | 31A (Tc) | 39 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1690pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,402
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 16A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | - | 100V | 16A (Tc) | 115 mOhm @ 10A, 10V | 4V @ 250µA | 44nC @ 10V | 640pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,609
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 13A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 66W (Tc) | P-Channel | - | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,178
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 42A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 140W (Tc) | N-Channel | - | 100V | 42A (Tc) | 14 mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | 3980pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
2,108
In-stock
|
Infineon Technologies | MOSFET N CH 100V 56A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 143W (Tc) | N-Channel | - | 100V | 56A (Tc) | 13.9 mOhm @ 38A, 10V | 4V @ 100µA | 81nC @ 10V | 3031pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
1,219
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 10A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 48W (Tc) | N-Channel | - | 100V | 10A (Tc) | 185 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | |||
|
|
VIEW |
949
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 9.4A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 48W (Tc) | N-Channel | - | 100V | 9.4A (Tc) | 210 mOhm @ 5.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
