Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPA180N10N3GXKSA1
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1,032
In-stock
Infineon Technologies MOSFET N-CH 100V 28A TO220-FP OptiMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220FP 30W (Tc) N-Channel - 100V 28A (Tc) 18 mOhm @ 28A, 10V 3.5V @ 35µA 25nC @ 10V 1800pF @ 50V 6V, 10V ±20V
IPI180N10N3GXKSA1
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RFQ
1,207
In-stock
Infineon Technologies MOSFET N-CH 100V 43A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 71W (Tc) N-Channel - 100V 43A (Tc) 18 mOhm @ 33A, 10V 3.5V @ 33µA 25nC @ 10V 1800pF @ 50V 6V, 10V ±20V
IPP180N10N3GXKSA1
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RFQ
2,567
In-stock
Infineon Technologies MOSFET N-CH 100V 43A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 71W (Tc) N-Channel - 100V 43A (Tc) 18 mOhm @ 33A, 10V 3.5V @ 33µA 25nC @ 10V 1800pF @ 50V 6V, 10V ±20V
TK22A10N1,S4X
RFQ
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RFQ
1,466
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 100V 52A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel - 100V 22A (Tc) 13.8 mOhm @ 11A, 10V 4V @ 300µA 28nC @ 10V 1800pF @ 50V 10V ±20V
TK22E10N1,S1X
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RFQ
2,633
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 100V 52A TO220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 72W (Tc) N-Channel - 100V 52A (Tc) 13.8 mOhm @ 11A, 10V 4V @ 300µA 28nC @ 10V 1800pF @ 50V 10V ±20V