Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NTD6415AN-1G
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RFQ
2,972
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ON Semiconductor MOSFET N-CH 100V 23A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 83W (Tc) N-Channel - 100V 23A (Tc) 55 mOhm @ 23A, 10V 4V @ 250µA 29nC @ 10V 700pF @ 25V 10V ±20V
NTD6600N-1G
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RFQ
2,978
In-stock
ON Semiconductor MOSFET N-CH 100V 12A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 1.28W (Ta), 56.6W (Tc) N-Channel - 100V 12A (Ta) 146 mOhm @ 6A, 5V 2V @ 250µA 20nC @ 5V 700pF @ 25V 5V ±20V
NTD6600N-001
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RFQ
1,868
In-stock
ON Semiconductor MOSFET N-CH 100V 12A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 1.28W (Ta), 56.6W (Tc) N-Channel - 100V 12A (Ta) 146 mOhm @ 6A, 5V 2V @ 250µA 20nC @ 5V 700pF @ 25V 5V ±20V
NTD6600N
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RFQ
1,143
In-stock
ON Semiconductor MOSFET N-CH 100V 12A DPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 1.28W (Ta), 56.6W (Tc) N-Channel - 100V 12A (Ta) 146 mOhm @ 6A, 5V 2V @ 250µA 20nC @ 5V 700pF @ 25V 5V ±20V
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RFQ
1,182
In-stock
Vishay Siliconix MOSFET N-CH 100V 14A TO-220-5 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-5 TO-220-5 88W (Tc) N-Channel Current Sensing 100V 14A (Tc) 160 mOhm @ 8.4A, 10V 4V @ 250µA 26nC @ 10V 700pF @ 25V 10V ±20V