Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFSL4310PBF
RFQ
VIEW
RFQ
2,362
In-stock
Infineon Technologies MOSFET N-CH 100V 130A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 300W (Tc) N-Channel - 100V 130A (Tc) 7 mOhm @ 75A, 10V 4V @ 250µA 250nC @ 10V 7670pF @ 50V 10V ±20V
IRFB4310GPBF
RFQ
VIEW
RFQ
1,994
In-stock
Infineon Technologies MOSFET N-CH 100V 130A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 300W (Tc) N-Channel - 100V 130A (Tc) 7 mOhm @ 75A, 10V 4V @ 250µA 250nC @ 10V 7670pF @ 50V 10V ±20V
IRFS4310PBF
RFQ
VIEW
RFQ
3,044
In-stock
Infineon Technologies MOSFET N-CH 100V 130A D2PAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 300W (Tc) N-Channel - 100V 130A (Tc) 7 mOhm @ 75A, 10V 4V @ 250µA 250nC @ 10V 7670pF @ 50V 10V ±20V
IXFH230N10T
RFQ
VIEW
RFQ
1,302
In-stock
IXYS MOSFET N-CH 100V 230A TO-247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 650W (Tc) N-Channel - 100V 230A (Tc) 4.7 mOhm @ 500mA, 10V 4.5V @ 1mA 250nC @ 10V 15300pF @ 25V 10V ±20V
AUIRFS4310
RFQ
VIEW
RFQ
857
In-stock
Infineon Technologies MOSFET N-CH 100V 75A D2PAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 300W (Tc) N-Channel - 100V 75A (Tc) 7 mOhm @ 75A, 10V 4V @ 250µA 250nC @ 10V 7670pF @ 50V 10V ±20V
VS-FB190SA10
RFQ
VIEW
RFQ
833
In-stock
Vishay Semiconductor Diodes Division MOSFET N-CH 100V 190A SOT227 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 568W (Tc) N-Channel - 100V 190A 6.5 mOhm @ 180A, 10V 4.35V @ 250µA 250nC @ 10V 10700pF @ 25V 10V ±20V
IRFB4310PBF
RFQ
VIEW
RFQ
2,902
In-stock
Infineon Technologies MOSFET N-CH 100V 130A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 300W (Tc) N-Channel - 100V 130A (Tc) 7 mOhm @ 75A, 10V 4V @ 250µA 250nC @ 10V 7670pF @ 50V 10V ±20V