Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFU540ZPBF
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Infineon Technologies MOSFET N-CH 100V 35A IPAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 91W (Tc) N-Channel 100V 35A (Tc) 28.5 mOhm @ 21A, 10V 4V @ 50µA 59nC @ 10V 1690pF @ 25V 10V ±20V
RJK1003DPN-E0#T2
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1,713
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Renesas Electronics America MOSFET N-CH 100V 50A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel 100V 50A (Ta) 11 mOhm @ 25A, 10V - 59nC @ 10V 4150pF @ 10V 10V ±20V
RJK1003DPP-E0#T2
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2,171
In-stock
Renesas Electronics America MOSFET N-CH 100V 50A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 25W (Tc) N-Channel 100V 50A (Ta) 11 mOhm @ 25A, 10V - 59nC @ 10V 4150pF @ 10V 10V ±20V
IRFR540ZPBF
RFQ
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RFQ
1,643
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Infineon Technologies MOSFET N-CH 100V 35A DPAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 91W (Tc) N-Channel 100V 35A (Tc) 28.5 mOhm @ 21A, 10V 4V @ 50µA 59nC @ 10V 1690pF @ 25V 10V ±20V
PSMN013-100ES,127
RFQ
VIEW
RFQ
3,568
In-stock
Nexperia USA Inc. MOSFET N-CH 100V I2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 170W (Tc) N-Channel 100V 68A (Tc) 13.9 mOhm @ 15A, 10V 4V @ 1mA 59nC @ 10V 3195pF @ 50V 10V ±20V
AUIRFU540Z
RFQ
VIEW
RFQ
3,336
In-stock
Infineon Technologies MOSFET N CH 100V 35A IPAK HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 91W (Tc) N-Channel 100V 35A (Tc) 28.5 mOhm @ 21A, 10V 4V @ 50µA 59nC @ 10V 1690pF @ 25V 10V ±20V
AUIRFR540Z
RFQ
VIEW
RFQ
1,866
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Infineon Technologies MOSFET N CH 100V 35A DPAK HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 91W (Tc) N-Channel 100V 35A (Tc) 28.5 mOhm @ 21A, 10V 4V @ 50µA 59nC @ 10V 1690pF @ 25V 10V ±20V
PSMN013-100PS,127
RFQ
VIEW
RFQ
3,031
In-stock
Nexperia USA Inc. MOSFET N-CH 100V 68A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 170W (Tc) N-Channel 100V 68A (Tc) 13.9 mOhm @ 15A, 10V 4V @ 1mA 59nC @ 10V 3195pF @ 50V 10V ±20V