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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IXFC110N10P	RFQ VIEW	PDF RFQ	691 In-stock	IXYS	MOSFET N-CH 100V 60A ISOPLUS220		HiPerFET™, PolarHT™	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	ISOPLUS220™	ISOPLUS220™	120W (Tc)	N-Channel	-	100V	60A (Tc)	17 mOhm @ 55A, 10V	5V @ 4mA	110nC @ 10V	3550pF @ 25V	10V	±20V
	IXTT110N10P	RFQ VIEW	PDF RFQ	1,642 In-stock	IXYS	MOSFET N-CH 100V 110A TO-268		PolarHT™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	TO-268	480W (Tc)	N-Channel	-	100V	110A (Tc)	15 mOhm @ 500mA, 10V	5V @ 250µA	110nC @ 10V	3550pF @ 25V	10V	±20V
	IXFH110N10P	RFQ VIEW	PDF RFQ	1,184 In-stock	IXYS	MOSFET N-CH 100V 110A TO-247		PolarHT™ HiPerFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXFH)	480W (Tc)	N-Channel	-	100V	110A (Tc)	15 mOhm @ 500mA, 10V	5V @ 4mA	110nC @ 10V	3550pF @ 25V	10V	±20V
	IXTQ110N10P	RFQ VIEW	PDF RFQ	1,219 In-stock	IXYS	MOSFET N-CH 100V 110A TO-3P		PolarHT™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P	480W (Tc)	N-Channel	-	100V	110A (Tc)	15 mOhm @ 500mA, 10V	5V @ 250µA	110nC @ 10V	3550pF @ 25V	10V	±20V
	FDI3632	RFQ VIEW	PDF RFQ	3,561 In-stock	ON Semiconductor	MOSFET N-CH 100V 80A TO-262AB		PowerTrench®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK (TO-262)	310W (Tc)	N-Channel	-	100V	12A (Ta), 80A (Tc)	9 mOhm @ 80A, 10V	4V @ 250µA	110nC @ 10V	6000pF @ 25V	6V, 10V	±20V
	IRF1310NL	RFQ VIEW	PDF RFQ	1,627 In-stock	Infineon Technologies	MOSFET N-CH 100V 42A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	3.8W (Ta), 160W (Tc)	N-Channel	-	100V	42A (Tc)	36 mOhm @ 22A, 10V	4V @ 250µA	110nC @ 10V	1900pF @ 25V	10V	±20V
	IXTH60N10	RFQ VIEW	PDF RFQ	3,043 In-stock	IXYS	MOSFET N-CH 100V 60A TO-247		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)	300W (Tc)	N-Channel	-	100V	60A (Tc)	20 mOhm @ 30A, 10V	4V @ 250µA	110nC @ 10V	3200pF @ 25V	10V	±20V
	IXTT60N10	RFQ VIEW	PDF RFQ	2,112 In-stock	IXYS	MOSFET N-CH 100V 60A TO-268		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	TO-268	300W (Tc)	N-Channel	-	100V	60A (Tc)	20 mOhm @ 30A, 10V	4V @ 250µA	110nC @ 10V	3200pF @ 25V	10V	±20V
	IRF1310NSPBF	RFQ VIEW	PDF RFQ	2,356 In-stock	Infineon Technologies	MOSFET N-CH 100V 42A D2PAK		HEXFET®	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 160W (Tc)	N-Channel	-	100V	42A (Tc)	36 mOhm @ 22A, 10V	4V @ 250µA	110nC @ 10V	1900pF @ 25V	10V	±20V
	TK55D10J1(Q)	RFQ VIEW	PDF RFQ	2,652 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 55A TO220W		-	Obsolete	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220(W)	140W (Tc)	N-Channel	-	100V	55A (Ta)	10.5 mOhm @ 27A, 10V	2.3V @ 1mA	110nC @ 10V	5700pF @ 10V	4.5V, 10V	±20V
	IRF9540NLPBF	RFQ VIEW	PDF RFQ	2,535 In-stock	Infineon Technologies	MOSFET P-CH 100V 23A TO262-3		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	3.1W (Ta), 110W (Tc)	P-Channel	-	100V	23A (Tc)	117 mOhm @ 14A, 10V	4V @ 250µA	110nC @ 10V	1450pF @ 25V	10V	±20V
	IRFP150NPBF	RFQ VIEW	PDF RFQ	2,839 In-stock	Infineon Technologies	MOSFET N-CH 100V 42A TO-247AC		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC	160W (Tc)	N-Channel	-	100V	42A (Tc)	36 mOhm @ 23A, 10V	4V @ 250µA	110nC @ 10V	1900pF @ 25V	10V	±20V
	IRF1310NPBF	RFQ VIEW	PDF RFQ	3,596 In-stock	Infineon Technologies	MOSFET N-CH 100V 42A TO-220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	160W (Tc)	N-Channel	-	100V	42A (Tc)	36 mOhm @ 22A, 10V	4V @ 250µA	110nC @ 10V	1900pF @ 25V	10V	±20V
	FDP3632	RFQ VIEW	PDF RFQ	1,003 In-stock	ON Semiconductor	MOSFET N-CH 100V 80A TO-220AB		PowerTrench®	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3	310W (Tc)	N-Channel	-	100V	12A (Ta), 80A (Tc)	9 mOhm @ 80A, 10V	4V @ 250µA	110nC @ 10V	6000pF @ 25V	6V, 10V	±20V
	IRFP150MPBF	RFQ VIEW	PDF RFQ	2,126 In-stock	Infineon Technologies	MOSFET N-CH 100V 42A TO-247AC		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC	160W (Tc)	N-Channel	-	100V	42A (Tc)	36 mOhm @ 23A, 10V	4V @ 250µA	110nC @ 10V	1900pF @ 25V	10V	±20V
	FDH3632	RFQ VIEW	PDF RFQ	1,227 In-stock	ON Semiconductor	MOSFET N-CH 100V 80A TO-247		PowerTrench®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247	310W (Tc)	N-Channel	-	100V	12A (Ta), 80A (Tc)	9 mOhm @ 80A, 10V	4V @ 250µA	110nC @ 10V	6000pF @ 25V	6V, 10V	±20V
	IRF9540NSPBF	RFQ VIEW	PDF RFQ	2,562 In-stock	Infineon Technologies	MOSFET P-CH 100V 23A D2PAK		HEXFET®	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.1W (Ta), 110W (Tc)	P-Channel	-	100V	23A (Tc)	117 mOhm @ 14A, 10V	4V @ 250µA	110nC @ 10V	1450pF @ 25V	10V	±20V

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