Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTQ75N10P
RFQ
VIEW
RFQ
2,585
In-stock
IXYS MOSFET N-CH 100V 75A TO-3P PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 360W (Tc) N-Channel - 100V 75A (Tc) 25 mOhm @ 500mA, 10V 5.5V @ 250µA 74nC @ 10V 2250pF @ 25V 10V ±20V
IRF7473PBF
RFQ
VIEW
RFQ
3,281
In-stock
Infineon Technologies MOSFET N-CH 100V 6.9A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 100V 6.9A (Ta) 26 mOhm @ 4.1A, 10V 5.5V @ 250µA 61nC @ 10V 3180pF @ 25V 10V ±20V
IRFS4710PBF
RFQ
VIEW
RFQ
1,960
In-stock
Infineon Technologies MOSFET N-CH 100V 75A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 200W (Tc) N-Channel - 100V 75A (Tc) 14 mOhm @ 45A, 10V 5.5V @ 250µA 170nC @ 10V 6160pF @ 25V 10V ±20V
IRFSL4710PBF
RFQ
VIEW
RFQ
3,156
In-stock
Infineon Technologies MOSFET N-CH 100V 75A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 200W (Tc) N-Channel - 100V 75A (Tc) 14 mOhm @ 45A, 10V 5.5V @ 250µA 170nC @ 10V 6160pF @ 25V 10V ±20V
IRFR3412PBF
RFQ
VIEW
RFQ
1,776
In-stock
Infineon Technologies MOSFET N-CH 100V 48A DPAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 140W (Tc) N-Channel - 100V 48A (Tc) 25 mOhm @ 29A, 10V 5.5V @ 250µA 89nC @ 10V 3430pF @ 25V 10V ±20V
IRFU3412PBF
RFQ
VIEW
RFQ
990
In-stock
Infineon Technologies MOSFET N-CH 100V 48A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 140W (Tc) N-Channel - 100V 48A (Tc) 25 mOhm @ 29A, 10V 5.5V @ 250µA 89nC @ 10V 3430pF @ 25V 10V ±20V
IRFB4710PBF
RFQ
VIEW
RFQ
1,269
In-stock
Infineon Technologies MOSFET N-CH 100V 75A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 3.8W (Ta), 200W (Tc) N-Channel - 100V 75A (Tc) 14 mOhm @ 45A, 10V 5.5V @ 250µA 170nC @ 10V 6160pF @ 25V 10V ±20V
IXTA75N10P
RFQ
VIEW
RFQ
2,024
In-stock
IXYS MOSFET N-CH 100V 75A TO-263 PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 360W (Tc) N-Channel - 100V 75A (Tc) 25 mOhm @ 500mA, 10V 5.5V @ 250µA 74nC @ 10V 2250pF @ 25V 10V ±20V
IXTP75N10P
RFQ
VIEW
RFQ
1,180
In-stock
IXYS MOSFET N-CH 100V 75A TO-220 PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 360W (Tc) N-Channel - 100V 75A (Tc) 25 mOhm @ 500mA, 10V 5.5V @ 250µA 74nC @ 10V 2250pF @ 25V 10V ±20V
FDP3651U
RFQ
VIEW
RFQ
1,933
In-stock
ON Semiconductor MOSFET N-CH 100V 80A TO-220AB PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 255W (Tc) N-Channel - 100V 80A (Tc) 18 mOhm @ 80A, 10V 5.5V @ 250µA 69nC @ 10V 5522pF @ 25V 10V ±20V
IRFP4710PBF
RFQ
VIEW
RFQ
700
In-stock
Infineon Technologies MOSFET N-CH 100V 72A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 190W (Tc) N-Channel - 100V 72A (Tc) 14 mOhm @ 45A, 10V 5.5V @ 250µA 170nC @ 10V 6160pF @ 25V 10V ±20V