Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Taiwan Semiconductor Corporation MOSFET N-CH 100V 15A TO251 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251 (IPAK) 50W (Tc) N-Channel - 100V 15A (Tc) 90 mOhm @ 5A, 10V 2.5V @ 250µA 9.3nC @ 10V 1480pF @ 50V 4.5V, 10V ±20V
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Vishay Siliconix MOSFET N-CHANNEL 100V 86A DPAK Automotive, AEC-Q101, TrenchFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-4, DPak (3 Leads + Tab) D-PAK (TO-252) 136W (Tc) N-Channel - 100V 86A (Tc) 8.7 mOhm @ 25A, 10V 2.5V @ 250µA 65nC @ 10V 3500pF @ 25V 4.5V, 10V ±20V