Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFP22N10
RFQ
VIEW
RFQ
619
In-stock
ON Semiconductor MOSFET N-CH 100V 22A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel 100V 22A (Tc) 80 mOhm @ 22A, 10V 4V @ 250µA 150nC @ 20V - 10V ±20V
HUF75623P3
RFQ
VIEW
RFQ
3,487
In-stock
ON Semiconductor MOSFET N-CH 100V 22A TO-220AB UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 85W (Tc) N-Channel 100V 22A (Tc) 64 mOhm @ 22A, 10V 4V @ 250µA 52nC @ 20V 790pF @ 25V 10V ±20V
IRF540
RFQ
VIEW
RFQ
607
In-stock
STMicroelectronics MOSFET N-CH 100V 22A TO-220 STripFET™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 85W (Tc) N-Channel 100V 22A (Tc) 77 mOhm @ 11A, 10V 4V @ 250µA 41nC @ 10V 870pF @ 25V 10V ±20V
TK22A10N1,S4X
RFQ
VIEW
RFQ
1,466
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 100V 52A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel 100V 22A (Tc) 13.8 mOhm @ 11A, 10V 4V @ 300µA 28nC @ 10V 1800pF @ 50V 10V ±20V
AOTF2910L
RFQ
VIEW
RFQ
1,667
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 100V 22A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3F 2.1W (Ta), 27W (Tc) N-Channel 100V 22A (Tc) 24 mOhm @ 20A, 10V 2.7V @ 250µA 15nC @ 10V 1190pF @ 50V 4.5V, 10V ±20V