Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
NDPL100N10BG
RFQ
VIEW
RFQ
3,590
In-stock
ON Semiconductor MOSFET N-CH 100V 100A TO220 - Obsolete Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-220-3 2.1W (Ta), 110W (Tc) N-Channel - 100V 100A (Ta) 7.2 mOhm @ 50A, 15V 4V @ 1mA 35nC @ 10V 2950pF @ 50V 10V, 15V ±20V
CSD19534KCS
RFQ
VIEW
RFQ
2,695
In-stock
Texas Instruments MOSFET N-CH 100V 100A TO220 NexFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 118W (Tc) N-Channel - 100V 100A (Ta) 16.5 mOhm @ 30A, 10V 3.4V @ 250µA 22.2nC @ 10V 1670pF @ 50V 6V, 10V ±20V
TK100E10N1,S1X
RFQ
VIEW
RFQ
3,227
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 100V 100A TO220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220 255W (Tc) N-Channel - 100V 100A (Ta) 3.4 mOhm @ 50A, 10V 4V @ 1mA 140nC @ 10V 8800pF @ 50V 10V ±20V
CSD19531KCS
RFQ
VIEW
RFQ
1,705
In-stock
Texas Instruments MOSFET N-CH 100V 100A TO220-3 NexFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 214W (Tc) N-Channel - 100V 100A (Ta) 7.7 mOhm @ 60A, 10V 3.3V @ 250µA 38nC @ 10V 3870pF @ 50V 6V, 10V ±20V
CSD19533KCS
RFQ
VIEW
RFQ
3,715
In-stock
Texas Instruments MOSFET N-CH 100V 86A TO220-3 NexFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 188W (Tc) N-Channel - 100V 100A (Ta) 10.5 mOhm @ 55A, 10V 3.4V @ 250µA 35nC @ 10V 2670pF @ 50V 6V, 10V ±20V