- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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9 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,327
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 40A TO220AB | TrenchFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.75W (Ta), 107W (Tc) | N-Channel | - | 100V | 40A (Tc) | 30 mOhm @ 15A, 10V | 4V @ 250µA | 60nC @ 10V | 2400pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
2,999
In-stock
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ON Semiconductor | MOSFET N-CH 100V 40A TO-247 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 160W (Tc) | N-Channel | - | 100V | 40A (Tc) | 40 mOhm @ 40A, 10V | 4V @ 250µA | 300nC @ 20V | - | 10V | ±20V | |||
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VIEW |
3,355
In-stock
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Infineon Technologies | MOSFET P-CH 100V 40A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 200W (Tc) | P-Channel | - | 100V | 40A (Tc) | 60 mOhm @ 24A, 10V | 4V @ 250µA | 180nC @ 10V | 2700pF @ 25V | 10V | ±20V | |||
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VIEW |
2,815
In-stock
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ON Semiconductor | MOSFET N-CH 100V 40A TO-220F | PowerTrench® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F-3 | 33.3W (Tc) | N-Channel | - | 100V | 40A (Tc) | 8.5 mOhm @ 40A, 10V | 4V @ 250µA | 40nC @ 10V | 2695pF @ 50V | 10V | ±20V | |||
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VIEW |
2,674
In-stock
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ON Semiconductor | MOSFET N-CH 100V 40A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 160W (Tc) | N-Channel | - | 100V | 40A (Tc) | 40 mOhm @ 40A, 10V | 4V @ 250µA | 300nC @ 20V | - | 10V | ±20V | |||
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VIEW |
1,136
In-stock
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STMicroelectronics | MOSFET N-CH 100V 40A TO-220FP | DeepGATE™, STripFET™ VII | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 30W (Tc) | N-Channel | - | 100V | 40A (Tc) | 10 mOhm @ 40A, 10V | 4.5V @ 250µA | 45nC @ 10V | 3100pF @ 50V | 10V | ±20V | |||
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VIEW |
1,982
In-stock
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STMicroelectronics | MOSFET N-CH 100V 40A TO-220 | STripFET™ II | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 115W (Tc) | N-Channel | - | 100V | 40A (Tc) | 35 mOhm @ 17.5A, 10V | 4V @ 250µA | 55nC @ 10V | 1550pF @ 25V | 10V | ±20V | |||
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VIEW |
3,756
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 40A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 100V | 40A (Tc) | 8.2 mOhm @ 20A, 10V | 4V @ 500µA | 49nC @ 10V | 3000pF @ 50V | 10V | ±20V | |||
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VIEW |
1,806
In-stock
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Infineon Technologies | MOSFET P-CH 100V 40A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | P-Channel | - | 100V | 40A (Tc) | 60 mOhm @ 24A, 10V | 4V @ 250µA | 180nC @ 10V | 2700pF @ 25V | 10V | ±20V |