Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
AUIRFS4010
RFQ
VIEW
RFQ
3,477
In-stock
Infineon Technologies MOSFET N-CH 100V 180A D2PAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 375W (Tc) N-Channel - 100V 180A (Tc) 4.7 mOhm @ 106A, 10V 4V @ 250µA 215nC @ 10V 9575pF @ 50V 10V ±20V
IRFS4010PBF
RFQ
VIEW
RFQ
700
In-stock
Infineon Technologies MOSFET N-CH 100V 180A D2PAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 375W (Tc) N-Channel - 100V 180A (Tc) 4.7 mOhm @ 106A, 10V 4V @ 250µA 215nC @ 10V 9575pF @ 50V 10V ±20V
FDP047N10
RFQ
VIEW
RFQ
1,197
In-stock
ON Semiconductor MOSFET N-CH 100V 120A TO-220 PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 375W (Tc) N-Channel - 100V 120A (Tc) 4.7 mOhm @ 75A, 10V 4.5V @ 250µA 210nC @ 10V 15265pF @ 25V 10V ±20V
IRFSL4010PBF
RFQ
VIEW
RFQ
2,655
In-stock
Infineon Technologies MOSFET N-CH 100V 180A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 375W (Tc) N-Channel - 100V 180A (Tc) 4.7 mOhm @ 106A, 10V 4V @ 250µA 215nC @ 10V 9575pF @ 50V 10V ±20V
IPP023N10N5AKSA1
RFQ
VIEW
RFQ
2,190
In-stock
Infineon Technologies MOSFET N-CH 100V 120A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 375W (Tc) N-Channel - 100V 120A (Tc) 2.3 mOhm @ 100A, 10V 3.8V @ 270µA 210nC @ 10V 15600pF @ 50V 6V, 10V ±20V
CSD19536KCS
RFQ
VIEW
RFQ
1,262
In-stock
Texas Instruments MOSFET N-CH 100V TO-220 NexFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 375W (Tc) N-Channel - 100V 150A (Ta) 2.7 mOhm @ 100A, 10V 3.2V @ 250µA 153nC @ 10V 12000pF @ 50V 6V, 10V ±20V