Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFI530N
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3,052
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Infineon Technologies MOSFET N-CH 100V 12A TO220FP HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 41W (Tc) N-Channel - 100V 12A (Tc) 110 mOhm @ 6.6A, 10V 4V @ 250µA 44nC @ 10V 640pF @ 25V 10V ±20V
IPA030N10N3GXKSA1
RFQ
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RFQ
2,678
In-stock
Infineon Technologies MOSFET N-CH 100V 79A TO220-FP OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 41W (Tc) N-Channel - 100V 79A (Tc) 3 mOhm @ 79A, 10V 3.5V @ 270µA 206nC @ 10V 14800pF @ 50V 6V, 10V ±20V
IRFI530NPBF
RFQ
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RFQ
3,795
In-stock
Infineon Technologies MOSFET N-CH 100V 12A TO220FP HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 41W (Tc) N-Channel - 100V 12A (Tc) 110 mOhm @ 6.6A, 10V 4V @ 250µA 44nC @ 10V 640pF @ 25V 10V ±20V
FQPF33N10L
RFQ
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RFQ
2,961
In-stock
ON Semiconductor MOSFET N-CH 100V 18A TO-220F QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 41W (Tc) N-Channel - 100V 18A (Tc) 52 mOhm @ 9A, 10V 2V @ 250µA 40nC @ 5V 1630pF @ 25V 5V, 10V ±20V