Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFU110
RFQ
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RFQ
3,948
In-stock
Vishay Siliconix MOSFET N-CH 100V 4.3A I-PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 25W (Tc) N-Channel 100V 4.3A (Tc) 540 mOhm @ 900mA, 10V 4V @ 250µA 8.3nC @ 10V 180pF @ 25V 10V ±20V
RJK1003DPP-E0#T2
RFQ
VIEW
RFQ
2,171
In-stock
Renesas Electronics America MOSFET N-CH 100V 50A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 25W (Tc) N-Channel 100V 50A (Ta) 11 mOhm @ 25A, 10V - 59nC @ 10V 4150pF @ 10V 10V ±20V
STF25N10F7
RFQ
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RFQ
1,039
In-stock
STMicroelectronics MOSFET N-CH 100V 25A TO-220FP DeepGATE™, STripFET™ VII Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 25W (Tc) N-Channel 100V 19A (Tc) 35 mOhm @ 12.5A, 10V 4.5V @ 250µA 14nC @ 10V 920pF @ 50V 10V ±20V
IRFU110PBF
RFQ
VIEW
RFQ
1,313
In-stock
Vishay Siliconix MOSFET N-CH 100V 4.3A I-PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 25W (Tc) N-Channel 100V 4.3A (Tc) 540 mOhm @ 900mA, 10V 4V @ 250µA 8.3nC @ 10V 180pF @ 25V 10V ±20V