Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SPI80N10L
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RFQ
1,452
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Infineon Technologies MOSFET N-CH 100V 80A I2PAK SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 250W (Tc) N-Channel 100V 80A (Tc) 14 mOhm @ 58A, 10V 2V @ 2mA 240nC @ 10V 4540pF @ 25V 4.5V, 10V ±20V
SPI70N10L
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RFQ
2,247
In-stock
Infineon Technologies MOSFET N-CH 100V 70A I2PAK SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 250W (Tc) N-Channel 100V 70A (Tc) 16 mOhm @ 50A, 10V 2V @ 2mA 240nC @ 10V 4540pF @ 25V 4.5V, 10V ±20V
SPI47N10L
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RFQ
792
In-stock
Infineon Technologies MOSFET N-CH 100V 47A I2PAK SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 175W (Tc) N-Channel 100V 47A (Tc) 26 mOhm @ 33A, 10V 2V @ 2mA 135nC @ 10V 2500pF @ 25V 4.5V, 10V ±20V
SPI10N10L
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RFQ
1,238
In-stock
Infineon Technologies MOSFET N-CH 100V 10.3A I2PAK SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 50W (Tc) N-Channel 100V 10.3A (Tc) 154 mOhm @ 8.1A, 10V 2V @ 21µA 22nC @ 10V 444pF @ 25V 4.5V, 10V ±20V
IPI70N10S3L12AKSA1
RFQ
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RFQ
2,387
In-stock
Infineon Technologies MOSFET N-CH 100V 70A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 125W (Tc) N-Channel 100V 70A (Tc) 12.1 mOhm @ 70A, 10V 2.4V @ 83µA 80nC @ 10V 5550pF @ 25V 4.5V, 10V ±20V
IPI70N10SL16AKSA1
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RFQ
2,365
In-stock
Infineon Technologies MOSFET N-CH 100V 70A TO262-3 SIPMOS® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 250W (Tc) N-Channel 100V 70A (Tc) 16 mOhm @ 50A, 10V 2V @ 2mA 240nC @ 10V 4540pF @ 25V 4.5V, 10V ±20V
IPI50N10S3L16AKSA1
RFQ
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RFQ
3,127
In-stock
Infineon Technologies MOSFET N-CH 100V 50A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 100W (Tc) N-Channel 100V 50A (Tc) 15.7 mOhm @ 50A, 10V 2.4V @ 60µA 64nC @ 10V 4180pF @ 25V 4.5V, 10V ±20V
IPI47N10SL26AKSA1
RFQ
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RFQ
2,357
In-stock
Infineon Technologies MOSFET N-CH 100V 47A TO262-3 SIPMOS® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 175W (Tc) N-Channel 100V 47A (Tc) 26 mOhm @ 33A, 10V 2V @ 2mA 135nC @ 10V 2500pF @ 25V 4.5V, 10V ±20V
PSMN4R3-100ES,127
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RFQ
1,150
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Nexperia USA Inc. MOSFET N-CH 100V 120A I2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 338W (Tc) N-Channel 100V 120A (Tc) 4.3 mOhm @ 25A, 10V 4V @ 1mA 170nC @ 10V 9900pF @ 50V 4.5V, 10V ±20V