- Part Status :
- Packaging :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,107
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 120A TO262-3 | Automotive, AEC-Q101, TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 250W (Tc) | N-Channel | 100V | 120A (Tc) | 3.8 mOhm @ 20A, 10V | 3.5V @ 250µA | 190nC @ 10V | 7230pF @ 25V | 10V | ±20V | |||
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VIEW |
1,341
In-stock
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Infineon Technologies | MOSFET N-CH TO262-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 190W (Tc) | N-Channel | 100V | 120A (Tc) | 5.3 mOhm @ 100A, 10V | 3.5V @ 120µA | 91nC @ 10V | 6540pF @ 25V | 10V | ±20V | |||
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VIEW |
1,724
In-stock
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ON Semiconductor | MOSFET N-CH 100V 120A I2PAK-3 | PowerTrench® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 263W (Tc) | N-Channel | 100V | 120A (Tc) | 4.5 mOhm @ 100A, 10V | 4V @ 250µA | 74nC @ 10V | 5270pF @ 50V | 10V | ±20V | |||
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VIEW |
1,465
In-stock
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Infineon Technologies | MOSFET N-CH TO262-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO263-3-1 | 250W (Tc) | N-Channel | 100V | 120A (Tc) | 3.9 mOhm @ 100A, 10V | 3.5V @ 180µA | 140nC @ 10V | 10120pF @ 25V | 10V | ±20V | |||
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VIEW |
3,406
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 120A I2PAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 349W (Tc) | N-Channel | 100V | 120A (Tc) | 5.2 mOhm @ 25A, 10V | 4V @ 1mA | 180nC @ 10V | 11810pF @ 25V | 10V | ±20V | |||
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VIEW |
1,150
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 120A I2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 338W (Tc) | N-Channel | 100V | 120A (Tc) | 4.3 mOhm @ 25A, 10V | 4V @ 1mA | 170nC @ 10V | 9900pF @ 50V | 4.5V, 10V | ±20V | |||
|
VIEW |
810
In-stock
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ON Semiconductor | MOSFET N-CH 100V 120A I2PAK-3 | PowerTrench® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 263W (Tc) | N-Channel | 100V | 120A (Tc) | 4.5 mOhm @ 100A, 10V | 4V @ 250µA | 74nC @ 10V | 5270pF @ 50V | 10V | ±20V | |||
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VIEW |
2,042
In-stock
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Infineon Technologies | MOSFET N-CH 100V 120A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 250W (Tc) | N-Channel | 100V | 120A (Tc) | 6 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6860pF @ 50V | 10V | ±20V | |||
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|
VIEW |
2,986
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 120A I2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 338W (Tc) | N-Channel | 100V | 120A (Tc) | 5 mOhm @ 25A, 10V | 4V @ 1mA | 170nC @ 10V | 9900pF @ 50V | 10V | ±20V | |||
