- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,361
In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | 100V | 100A (Tc) | 6.5 mOhm @ 100A, 10V | 4V @ 180µA | 139nC @ 10V | 9200pF @ 50V | 10V | ±20V | |||
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VIEW |
3,694
In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | 100V | 100A (Tc) | 5.4 mOhm @ 100A, 10V | 4V @ 250µA | 181nC @ 10V | 12000pF @ 50V | 10V | ±20V | |||
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VIEW |
3,791
In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | 100V | 100A (Tc) | 4.2 mOhm @ 100A, 10V | 4V @ 250µA | 210nC @ 10V | 13800pF @ 50V | 10V | ±20V | |||
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VIEW |
3,524
In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | 100V | 100A (Tc) | 3 mOhm @ 100A, 10V | 3.5V @ 275µA | 206nC @ 10V | 14800pF @ 50V | 6V, 10V | ±20V | |||
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VIEW |
1,680
In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | 100V | 100A (Tc) | 5.1 mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | 11570pF @ 25V | 10V | ±20V | |||
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VIEW |
2,625
In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | 100V | 100A (Tc) | 4.5 mOhm @ 100A, 10V | 3.5V @ 150µA | 117nC @ 10V | 8410pF @ 50V | 6V, 10V | ±20V | |||
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VIEW |
1,164
In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | 100V | 100A (Tc) | 3 mOhm @ 100A, 10V | 3.5V @ 275µA | 206nC @ 10V | 14800pF @ 50V | 6V, 10V | ±20V | |||
_SOT226%20Pkg.jpg)
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VIEW |
1,000
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V I2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 269W (Tc) | N-Channel | 100V | 100A (Tc) | 6.8 mOhm @ 15A, 10V | 4V @ 1mA | 125nC @ 10V | 6686pF @ 50V | 10V | ±20V | |||
