Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPI12CN10N G
RFQ
VIEW
RFQ
972
In-stock
Infineon Technologies MOSFET N-CH 100V 67A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 125W (Tc) N-Channel - 100V 67A (Tc) 12.9 mOhm @ 67A, 10V 4V @ 83µA 65nC @ 10V 4320pF @ 50V 10V ±20V
IPI70N10S3L12AKSA1
RFQ
VIEW
RFQ
2,387
In-stock
Infineon Technologies MOSFET N-CH 100V 70A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 125W (Tc) N-Channel - 100V 70A (Tc) 12.1 mOhm @ 70A, 10V 2.4V @ 83µA 80nC @ 10V 5550pF @ 25V 4.5V, 10V ±20V
IPI70N10S312AKSA1
RFQ
VIEW
RFQ
2,551
In-stock
Infineon Technologies MOSFET N-CH 100V 70A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 125W (Tc) N-Channel - 100V 70A (Tc) 11.6 mOhm @ 70A, 10V 4V @ 83µA 66nC @ 10V 4355pF @ 25V 10V ±20V
IPI086N10N3GXKSA1
RFQ
VIEW
RFQ
1,959
In-stock
Infineon Technologies MOSFET N-CH 100V 80A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 125W (Tc) N-Channel - 100V 80A (Tc) 8.6 mOhm @ 73A, 10V 3.5V @ 75µA 55nC @ 10V 3980pF @ 50V 6V, 10V ±20V