Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SPI35N10
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3,932
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Infineon Technologies MOSFET N-CH 100V 35A I2PAK SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 150W (Tc) N-Channel - 100V 35A (Tc) 44 mOhm @ 26.4A, 10V 4V @ 83µA 65nC @ 10V 1570pF @ 25V 10V ±20V
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956
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ON Semiconductor MOSFET N-CH 100V 61A TO-262AA PowerTrench® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 150W (Tc) N-Channel - 100V 9A (Ta), 61A (Tc) 16 mOhm @ 61A, 10V 4V @ 250µA 53nC @ 10V 2880pF @ 25V 6V, 10V ±20V
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1,153
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Infineon Technologies MOSFET N-CH 100V 80A TO262-3 OptiMOS™ 3 Obsolete - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 150W (Tc) N-Channel - 100V 80A (Tc) 7.2 mOhm @ 80A, 10V 3.5V @ 90µA 68nC @ 10V 4910pF @ 50V 6V, 10V ±20V
IPI072N10N3GXKSA1
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710
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Infineon Technologies MOSFET N-CH 100V 80A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 150W (Tc) N-Channel - 100V 80A (Tc) 7.2 mOhm @ 80A, 10V 3.5V @ 90µA 68nC @ 10V 4910pF @ 50V 6V, 10V ±20V