Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
PMT760EN,115
RFQ
VIEW
RFQ
2,844
In-stock
NXP USA Inc. MOSFET N-CH 100V SC-73 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 800mW (Ta), 6.2W (Tc) N-Channel - 100V 900mA (Ta) 950 mOhm @ 800mA, 10V 2.5V @ 250µA 3nC @ 10V 160pF @ 80V 4.5V, 10V ±20V
PMT760EN,135
RFQ
VIEW
RFQ
1,991
In-stock
NXP USA Inc. MOSFET N-CH 100V SC-73 - Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 800mW (Ta), 6.2W (Tc) N-Channel - 100V 900mA (Ta) 950 mOhm @ 800mA, 10V 2.5V @ 250µA 3nC @ 10V 160pF @ 80V 4.5V, 10V ±20V
PMT760EN,135
RFQ
VIEW
RFQ
1,238
In-stock
NXP USA Inc. MOSFET N-CH 100V SC-73 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 800mW (Ta), 6.2W (Tc) N-Channel - 100V 900mA (Ta) 950 mOhm @ 800mA, 10V 2.5V @ 250µA 3nC @ 10V 160pF @ 80V 4.5V, 10V ±20V
PMT760EN,135
RFQ
VIEW
RFQ
2,944
In-stock
NXP USA Inc. MOSFET N-CH 100V SC-73 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 800mW (Ta), 6.2W (Tc) N-Channel - 100V 900mA (Ta) 950 mOhm @ 800mA, 10V 2.5V @ 250µA 3nC @ 10V 160pF @ 80V 4.5V, 10V ±20V
FDMA86108LZ
RFQ
VIEW
RFQ
1,830
In-stock
ON Semiconductor MOSFET N-CH 100V 2.2A 6MLP PowerTrench® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-MicroFET (2x2) 2.4W (Ta) N-Channel - 100V 2.2A (Ta) 243 mOhm @ 2.2A, 10V 3V @ 250µA 3nC @ 10V 163pF @ 50V 4.5V, 10V ±20V
FDMA86108LZ
RFQ
VIEW
RFQ
3,331
In-stock
ON Semiconductor MOSFET N-CH 100V 2.2A 6MLP PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-MicroFET (2x2) 2.4W (Ta) N-Channel - 100V 2.2A (Ta) 243 mOhm @ 2.2A, 10V 3V @ 250µA 3nC @ 10V 163pF @ 50V 4.5V, 10V ±20V
FDMA86108LZ
RFQ
VIEW
RFQ
3,963
In-stock
ON Semiconductor MOSFET N-CH 100V 2.2A 6MLP PowerTrench® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-MicroFET (2x2) 2.4W (Ta) N-Channel - 100V 2.2A (Ta) 243 mOhm @ 2.2A, 10V 3V @ 250µA 3nC @ 10V 163pF @ 50V 4.5V, 10V ±20V