- Manufacture :
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- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,986
In-stock
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Infineon Technologies | MOSFET N-CH 100V 21A D2PAK | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 90W (Tc) | N-Channel | - | 100V | 21A (Tc) | 80 mOhm @ 15A, 10V | 4V @ 44µA | 38.4nC @ 10V | 865pF @ 25V | 10V | ±20V | |||
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VIEW |
1,128
In-stock
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Infineon Technologies | MOSFET N-CH 100V 21A D2PAK | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 90W (Tc) | N-Channel | - | 100V | 21A (Tc) | 80 mOhm @ 15A, 10V | 4V @ 44µA | 38.4nC @ 10V | 865pF @ 25V | 10V | ±20V | |||
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VIEW |
3,216
In-stock
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Infineon Technologies | MOSFET N-CH 100V 21A D2PAK | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 90W (Tc) | N-Channel | - | 100V | 21A (Tc) | 80 mOhm @ 15A, 10V | 4V @ 44µA | 38.4nC @ 10V | 865pF @ 25V | 10V | ±20V | |||
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VIEW |
2,870
In-stock
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Infineon Technologies | MOSFET N-CH 100V 21A D2PAK | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 90W (Tc) | N-Channel | - | 100V | 21A (Tc) | 80 mOhm @ 15A, 10V | 4V @ 44µA | 38.4nC @ 10V | 865pF @ 25V | 10V | ±20V | |||
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VIEW |
709
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 21A PPAK SO-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 4.1W (Ta), 29.7W (Tc) | N-Channel | - | 100V | 21A (Tc) | 33 mOhm @ 10A, 10V | 3V @ 250µA | 19.5nC @ 10V | 550pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
744
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 21A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 4.1W (Ta), 29.7W (Tc) | N-Channel | - | 100V | 21A (Tc) | 33 mOhm @ 10A, 10V | 3V @ 250µA | 19.5nC @ 10V | 550pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
1,699
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 21A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 4.1W (Ta), 29.7W (Tc) | N-Channel | - | 100V | 21A (Tc) | 33 mOhm @ 10A, 10V | 3V @ 250µA | 19.5nC @ 10V | 550pF @ 50V | 4.5V, 10V | ±20V | |||
