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- Supplier Device Package :
- Power Dissipation (Max) :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,646
In-stock
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Infineon Technologies | MOSFET N-CH 100V 42A D2PAK | HEXFET® | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 160W (Tc) | N-Channel | - | 100V | 42A (Tc) | 36 mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | 1900pF @ 25V | 10V | ±20V | |||
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647
In-stock
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Infineon Technologies | MOSFET N-CH 100V 42A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 160W (Tc) | N-Channel | - | 100V | 42A (Tc) | 36 mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | 1900pF @ 25V | 10V | ±20V | |||
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897
In-stock
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ON Semiconductor | MOSFET N-CH 100V 57A D2PAK | QFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.75W (Ta), 160W (Tc) | N-Channel | - | 100V | 57A (Tc) | 23 mOhm @ 28.5A, 10V | 4V @ 250µA | 110nC @ 10V | 3300pF @ 25V | 10V | ±25V | |||
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2,640
In-stock
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ON Semiconductor | MOSFET P-CH 100V 33.5A D2PAK | QFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.75W (Ta), 155W (Tc) | P-Channel | - | 100V | 33.5A (Tc) | 60 mOhm @ 16.75A, 10V | 4V @ 250µA | 110nC @ 10V | 2910pF @ 25V | 10V | ±25V | |||
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VIEW |
3,121
In-stock
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ON Semiconductor | MOSFET P-CH 100V 33.5A D2PAK | Automotive, AEC-Q101, QFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.75W (Ta), 155W (Tc) | P-Channel | - | 100V | 33.5A (Tc) | 60 mOhm @ 16.75A, 10V | 4V @ 250µA | 110nC @ 10V | 2910pF @ 25V | 10V | ±25V | |||
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VIEW |
3,430
In-stock
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Infineon Technologies | MOSFET N-CH 100V 42A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 160W (Tc) | N-Channel | - | 100V | 42A (Tc) | 36 mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | 1900pF @ 25V | 10V | ±20V | |||
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1,785
In-stock
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Infineon Technologies | MOSFET P-CH 100V 23A D2PAK | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 110W (Tc) | P-Channel | - | 100V | 23A (Tc) | 117 mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | 1450pF @ 25V | 10V | ±20V | |||
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VIEW |
2,431
In-stock
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ON Semiconductor | MOSFET N-CH 100V 12A D2PAK | Automotive, AEC-Q101, PowerTrench® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 310W (Tc) | N-Channel | - | 100V | 12A (Ta) | 9 mOhm @ 80A, 10V | 4V @ 250µA | 110nC @ 10V | 6000pF @ 25V | 10V | ±20V | |||
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3,104
In-stock
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Infineon Technologies | MOSFET P-CH 100V 23A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 110W (Tc) | P-Channel | - | 100V | 23A (Tc) | 117 mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | 1450pF @ 25V | 10V | ±20V | |||
