Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Toshiba Semiconductor and Storage MOSFET N-CH 100V 55A DPAK U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK+ 157W (Tc) N-Channel 100V 55A (Ta) 6.5 mOhm @ 27.5A, 10V 4V @ 500µA 49nC @ 10V 3280pF @ 10V 10V ±20V
PSMN016-100BS,118
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Nexperia USA Inc. MOSFET N-CH 100V 57A D2PAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 148W (Tc) N-Channel 100V 57A (Tj) 16 mOhm @ 15A, 10V 4V @ 1mA 49nC @ 10V 2404pF @ 50V 10V ±20V