- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,087
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 40A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 93W (Tc) | N-Channel | - | 100V | 40A (Ta) | 18 mOhm @ 20A, 10V | 4V @ 1mA | 61nC @ 10V | 3110pF @ 10V | 10V | ±20V | |||
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VIEW |
3,290
In-stock
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Renesas Electronics America | MOSFET N-CH 100V 70A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 120W (Tc) | N-Channel | - | 100V | 70A (Tc) | 20 mOhm @ 35A, 10V | 3.3V @ 250µA | 75nC @ 10V | 3750pF @ 25V | 10V | ±20V | |||
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3,798
In-stock
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STMicroelectronics | MOSFET P-CH 100V 10A | STripFET™ F6 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 40W (Tc) | P-Channel | - | 100V | 10A (Tc) | 180 mOhm @ 5A, 10V | 4V @ 250µA | 16.5nC @ 10V | 864pF @ 80V | 10V | ±20V | |||
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2,549
In-stock
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STMicroelectronics | MOSFET N-CH 100V POWERFLAT5X6 | DeepGATE™, STripFET™ VII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 5W (Ta), 100W (Tc) | N-Channel | - | 100V | 70A (Tc) | 10.5 mOhm @ 8A, 10V | 4V @ 250µA | 39nC @ 10V | 3550pF @ 50V | 10V | ±20V | |||
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2,568
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 55A DPAK | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 157W (Tc) | N-Channel | - | 100V | 55A (Ta) | 6.5 mOhm @ 27.5A, 10V | 4V @ 500µA | 49nC @ 10V | 3280pF @ 10V | 10V | ±20V | |||
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1,734
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 7A DPAK | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 50W (Tc) | N-Channel | - | 100V | 7A (Ta) | 48 mOhm @ 3.5A, 10V | 4V @ 100µA | 7.1nC @ 10V | 470pF @ 10V | 10V | ±20V | |||
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VIEW |
1,127
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 33A DPAK | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 125W (Tc) | N-Channel | - | 100V | 33A (Ta) | 9.7 mOhm @ 16.5A, 10V | 4V @ 500µA | 28nC @ 10V | 2050pF @ 10V | 10V | ±20V | |||
