Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPB180N10S403ATMA1
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Infineon Technologies MOSFET N-CH TO263-7 Automotive, AEC-Q101, OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7-3 250W (Tc) N-Channel - 100V 180A (Tc) 3.3 mOhm @ 100A, 10V 3.5V @ 180µA 140nC @ 10V 10120pF @ 25V 10V ±20V
IPB180N10S402ATMA1
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Infineon Technologies MOSFET N-CH TO263-7 Automotive, AEC-Q101, OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7-3 300W (Tc) N-Channel - 100V 180A (Tc) 2.5 mOhm @ 100A, 10V 3.5V @ 275µA 200nC @ 10V 14600pF @ 25V 10V ±20V