Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PHM30NQ10T,518
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3,540
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NXP USA Inc. MOSFET N-CH 100V 37.6A 8HVSON TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad 8-HVSON (6x5) 62.5W (Tc) N-Channel 100V 37.6A (Tc) 20 mOhm @ 18A, 10V 4V @ 1mA 53.7nC @ 10V 3600pF @ 25V 10V ±20V
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2,435
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Diodes Incorporated MOSFET N-CH 100V 108A TO220AB Automotive, AEC-Q101 Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 2.4W (Ta), 166W (Tc) N-Channel 100V 108A (Tc) 9.5 mOhm @ 13A, 10V 3.5V @ 250µA 53.7nC @ 10V 2592pF @ 50V 10V ±20V
DMTH10H010LCT
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3,429
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Diodes Incorporated MOSFET 100V 108A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 2.4W (Ta), 166W (Tc) N-Channel 100V 108A (Tc) 9.5 mOhm @ 13A, 10V 3.5V @ 250µA 53.7nC @ 10V 2592pF @ 50V 10V ±20V