- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
-
- 130W (Tc) (2)
- 160W (Tc) (1)
- 200W (Tc) (3)
- 263W (Tc) (2)
- 3.1W (Ta), 110W (Tc) (1)
- 3.1W (Ta), 170W (Tc) (1)
- 3.75W (Ta), 155W (Tc) (1)
- 3.75W (Ta), 40W (Tc) (2)
- 3.75W (Ta), 65W (Tc) (1)
- 3.8W (Ta), 140W (Tc) (1)
- 3.8W (Ta), 160W (Tc) (1)
- 3.8W (Ta), 200W (Tc) (1)
- 3.8W (Ta), 48W (Tc) (4)
- 3.8W (Ta), 70W (Tc) (1)
- 3.8W (Ta), 79W (Tc) (1)
- 300W (Tc) (4)
- 375W (Tc) (1)
- 92W (Tc) (2)
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
-
- 100A (Tc) (2)
- 120A (Tc) (2)
- 12A (Tc) (1)
- 130A (Tc) (1)
- 14A (Tc) (2)
- 17A (Tc) (1)
- 180A (Tc) (1)
- 19A (Tc) (1)
- 23A (Tc) (2)
- 28A (Tc) (1)
- 33.5A (Tc) (1)
- 33A (Tc) (2)
- 36A (Tc) (2)
- 38A (Tc) (1)
- 4.5A (Tc) (1)
- 40A (Tc) (1)
- 42A (Tc) (1)
- 4A (Tc) (1)
- 56A (Tc) (1)
- 57A (Tc) (2)
- 59A (Tc) (1)
- 6.8A (Tc) (3)
- 7.3A (Tc) (1)
- 80A (Tc) (1)
- 8A (Tc) (1)
- 9.7A (Tc) (2)
- Rds On (Max) @ Id, Vgs :
-
- 1.05 Ohm @ 2.25A, 10V (1)
- 1.2 Ohm @ 2.4A, 10V (1)
- 117 mOhm @ 11A, 10V (1)
- 117 mOhm @ 14A, 10V (1)
- 160 mOhm @ 8.4A, 10V (1)
- 18 mOhm @ 35A, 10V (1)
- 200 mOhm @ 11A, 10V (1)
- 200 mOhm @ 5.7A, 10V (2)
- 200 mOhm @ 8.4A, 10V (1)
- 23 mOhm @ 28A, 10V (2)
- 23 mOhm @ 40A, 10V (1)
- 25 mOhm @ 56A, 10V (1)
- 26.5 mOhm @ 22A, 10V (2)
- 300 mOhm @ 7.2A, 10V (1)
- 350 mOhm @ 3.65A, 10V (1)
- 36 mOhm @ 22A, 10V (1)
- 4.2 mOhm @ 100A, 10V (1)
- 4.5 mOhm @ 100A, 10V (2)
- 4.7 mOhm @ 106A, 10V (1)
- 44 mOhm @ 16A, 10V (2)
- 480 mOhm @ 4A, 10V (2)
- 5.4 mOhm @ 100A, 10V (1)
- 530 mOhm @ 4A, 10V (1)
- 60 mOhm @ 16.75A, 10V (1)
- 60 mOhm @ 24A, 10V (1)
- 60 mOhm @ 38A, 10V (1)
- 600 mOhm @ 4.1A, 10V (1)
- 7 mOhm @ 75A, 10V (1)
- 77 mOhm @ 17A, 10V (1)
- 90 mOhm @ 9A, 10V (1)
- Gate Charge (Qg) (Max) @ Vgs :
-
- 104nC @ 10V (1)
- 110nC @ 10V (3)
- 120nC @ 10V (1)
- 130nC @ 10V (2)
- 130nC @ 20V (1)
- 15nC @ 10V (1)
- 180nC @ 10V (1)
- 181nC @ 10V (1)
- 18nC @ 10V (1)
- 210nC @ 10V (1)
- 215nC @ 10V (1)
- 230nC @ 10V (1)
- 250nC @ 10V (1)
- 25nC @ 10V (2)
- 26nC @ 10V (1)
- 27nC @ 10V (2)
- 37nC @ 10V (1)
- 38nC @ 10V (1)
- 58nC @ 10V (1)
- 61nC @ 10V (1)
- 63nC @ 10V (2)
- 7.5nC @ 10V (1)
- 71nC @ 10V (2)
- 72nC @ 10V (1)
- 74nC @ 10V (2)
- 8.2nC @ 10V (1)
- 8.7nC @ 10V (1)
- 97nC @ 10V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 12000pF @ 50V (1)
- 1300pF @ 25V (1)
- 13800pF @ 50V (1)
- 1400pF @ 25V (1)
- 1450pF @ 25V (1)
- 1700pF @ 25V (1)
- 1770pF @ 25V (2)
- 1900pF @ 25V (1)
- 1960pF @ 25V (2)
- 2000pF @ 25V (1)
- 200pF @ 25V (1)
- 250pF @ 25V (2)
- 2700pF @ 25V (1)
- 2780pF @ 25V (1)
- 2900pF @ 25V (1)
- 2910pF @ 25V (1)
- 3130pF @ 25V (2)
- 330pF @ 25V (2)
- 350pF @ 25V (2)
- 390pF @ 25V (1)
- 4270pF @ 25V (1)
- 470pF @ 25V (1)
- 5270pF @ 50V (2)
- 670pF @ 25V (1)
- 760pF @ 25V (1)
- 7670pF @ 50V (1)
- 860pF @ 25V (1)
- 920pF @ 25V (1)
- 9575pF @ 50V (1)
- Applied Filters :
36 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,694
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 5.4 mOhm @ 100A, 10V | 4V @ 250µA | 181nC @ 10V | 12000pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
3,791
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 4.2 mOhm @ 100A, 10V | 4V @ 250µA | 210nC @ 10V | 13800pF @ 50V | 10V | ±20V | |||
|
VIEW |
2,362
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 130A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 300W (Tc) | N-Channel | - | 100V | 130A (Tc) | 7 mOhm @ 75A, 10V | 4V @ 250µA | 250nC @ 10V | 7670pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
644
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 6.8A TO262-3 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 48W (Tc) | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,341
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 36A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 92W (Tc) | N-Channel | - | 100V | 36A (Tc) | 26.5 mOhm @ 22A, 10V | 4V @ 250µA | 63nC @ 10V | 1770pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,564
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 19A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | - | 100V | 19A (Tc) | 200 mOhm @ 11A, 10V | 4V @ 250µA | 61nC @ 10V | 1400pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
703
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 12A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | - | 100V | 12A (Tc) | 300 mOhm @ 7.2A, 10V | 4V @ 250µA | 38nC @ 10V | 860pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,543
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 6.8A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | - | 100V | 6.8A (Tc) | 600 mOhm @ 4.1A, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,480
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 4A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | - | 100V | 4A (Tc) | 1.2 Ohm @ 2.4A, 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
911
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 28A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | - | N-Channel | - | 100V | 28A (Tc) | 77 mOhm @ 17A, 10V | 4V @ 250µA | 72nC @ 10V | 1700pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,485
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 14A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | - | N-Channel | - | 100V | 14A (Tc) | 160 mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | 670pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,253
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 9.7A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 48W (Tc) | N-Channel | - | 100V | 9.7A (Tc) | 200 mOhm @ 5.7A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
|
VIEW |
905
In-stock
|
ON Semiconductor | MOSFET P-CH 100V 33.5A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.75W (Ta), 155W (Tc) | P-Channel | - | 100V | 33.5A (Tc) | 60 mOhm @ 16.75A, 10V | 4V @ 250µA | 110nC @ 10V | 2910pF @ 25V | 10V | ±25V | |||
|
|
VIEW |
644
In-stock
|
ON Semiconductor | MOSFET P-CH 100V 8A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.75W (Ta), 65W (Tc) | P-Channel | - | 100V | 8A (Tc) | 530 mOhm @ 4A, 10V | 4V @ 250µA | 15nC @ 10V | 470pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
817
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 57A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 100V | 57A (Tc) | 23 mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,891
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 23A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 140W (Tc) | P-Channel | - | 100V | 23A (Tc) | 117 mOhm @ 11A, 10V | 4V @ 250µA | 97nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,755
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 14A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 79W (Tc) | P-Channel | - | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,479
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 6.8A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 48W (Tc) | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,355
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 40A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 200W (Tc) | P-Channel | - | 100V | 40A (Tc) | 60 mOhm @ 24A, 10V | 4V @ 250µA | 180nC @ 10V | 2700pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,218
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 33A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 130W (Tc) | N-Channel | - | 100V | 33A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,043
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 17A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 70W (Tc) | N-Channel | - | 100V | 17A (Tc) | 90 mOhm @ 9A, 10V | 4V @ 250µA | 37nC @ 10V | 920pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
941
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 57A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 100V | 57A (Tc) | 23 mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,627
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 42A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 160W (Tc) | N-Channel | - | 100V | 42A (Tc) | 36 mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | 1900pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,724
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 120A I2PAK-3 | PowerTrench® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 263W (Tc) | N-Channel | - | 100V | 120A (Tc) | 4.5 mOhm @ 100A, 10V | 4V @ 250µA | 74nC @ 10V | 5270pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
1,839
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 59A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 160W (Tc) | N-Channel | - | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,535
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 23A TO262-3 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.1W (Ta), 110W (Tc) | P-Channel | - | 100V | 23A (Tc) | 117 mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | 1450pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,542
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 7.3A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.75W (Ta), 40W (Tc) | N-Channel | - | 100V | 7.3A (Tc) | 350 mOhm @ 3.65A, 10V | 4V @ 250µA | 7.5nC @ 10V | 250pF @ 25V | 10V | ±25V | |||
|
|
VIEW |
2,276
In-stock
|
ON Semiconductor | MOSFET P-CH 100V 4.5A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.75W (Ta), 40W (Tc) | P-Channel | - | 100V | 4.5A (Tc) | 1.05 Ohm @ 2.25A, 10V | 4V @ 250µA | 8.2nC @ 10V | 250pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
1,723
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 9.7A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 48W (Tc) | N-Channel | - | 100V | 9.7A (Tc) | 200 mOhm @ 5.7A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,920
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 56A TO-262AA | UltraFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 200W (Tc) | N-Channel | - | 100V | 56A (Tc) | 25 mOhm @ 56A, 10V | 4V @ 250µA | 130nC @ 20V | 2000pF @ 25V | 10V | ±20V | |||
