Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFA180N10T2
RFQ
VIEW
RFQ
737
In-stock
IXYS MOSFET N-CH 100V 180A TO-263AA GigaMOS™, HiPerFET™, TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXFA) 480W (Tc) N-Channel - 100V 180A (Tc) 6 mOhm @ 50A, 10V 4V @ 250µA 185nC @ 10V 10500pF @ 25V 10V ±20V
IXFP180N10T2
RFQ
VIEW
RFQ
2,727
In-stock
IXYS MOSFET N-CH 100V 180A TO-220 GigaMOS™, HiPerFET™, TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 480W (Tc) N-Channel - 100V 180A (Tc) 6 mOhm @ 50A, 10V 4V @ 250µA 185nC @ 10V 10500pF @ 25V 10V ±20V
IXTH110N10L2
RFQ
VIEW
RFQ
3,416
In-stock
IXYS MOSFET N-CH 100V 110A TO-247 Linear L2™ Active Bulk MOSFET (Metal Oxide) - Through Hole TO-247-3 TO-247 (IXTH) 600W (Tc) N-Channel - 100V 110A (Tc) 18 mOhm @ 500mA, 10V 4.5V @ 250µA 260nC @ 10V 10500pF @ 25V 10V ±20V
IXTT110N10L2
RFQ
VIEW
RFQ
3,979
In-stock
IXYS MOSFET N-CH 100V 110A TO-268 Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 600W (Tc) N-Channel - 100V 110A (Tc) 18 mOhm @ 55A, 10V 4.5V @ 250µA 260nC @ 10V 10500pF @ 25V 10V ±20V
STP165N10F4
RFQ
VIEW
RFQ
2,879
In-stock
STMicroelectronics MOSFET N-CH 100V 120A TO-220 DeepGATE™, STripFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 315W (Tc) N-Channel - 100V 120A (Tc) 5.5 mOhm @ 60A, 10V 4V @ 250µA 180nC @ 10V 10500pF @ 25V 10V ±20V