Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IXTT75N10L2
RFQ
VIEW
RFQ
2,758
In-stock
IXYS MOSFET N-CH 100V 75A TO268 Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 400W (Tc) N-Channel - 100V 75A (Tc) 21 mOhm @ 500mA, 10V 4.5V @ 250µA 215nC @ 10V 8100pF @ 25V 10V ±20V
IXTH75N10L2
RFQ
VIEW
RFQ
3,992
In-stock
IXYS MOSFET N-CH 100V 75A TO-247 Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 400W (Tc) N-Channel - 100V 75A (Tc) 21 mOhm @ 500mA, 10V 4.5V @ 250µA 215nC @ 10V 8100pF @ 25V 10V ±20V
IRFSL4010PBF
RFQ
VIEW
RFQ
2,655
In-stock
Infineon Technologies MOSFET N-CH 100V 180A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 375W (Tc) N-Channel - 100V 180A (Tc) 4.7 mOhm @ 106A, 10V 4V @ 250µA 215nC @ 10V 9575pF @ 50V 10V ±20V
IRFS4010TRLPBF
RFQ
VIEW
RFQ
2,066
In-stock
Infineon Technologies MOSFET N-CH 100V 180A D2PAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 375W (Tc) N-Channel - 100V 180A (Tc) 4.7 mOhm @ 106A, 10V 4V @ 250µA 215nC @ 10V 9575pF @ 50V 10V ±20V
IRFS4010TRLPBF
RFQ
VIEW
RFQ
3,228
In-stock
Infineon Technologies MOSFET N-CH 100V 180A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 375W (Tc) N-Channel - 100V 180A (Tc) 4.7 mOhm @ 106A, 10V 4V @ 250µA 215nC @ 10V 9575pF @ 50V 10V ±20V
IRFS4010TRLPBF
RFQ
VIEW
RFQ
2,116
In-stock
Infineon Technologies MOSFET N-CH 100V 180A D2PAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 375W (Tc) N-Channel - 100V 180A (Tc) 4.7 mOhm @ 106A, 10V 4V @ 250µA 215nC @ 10V 9575pF @ 50V 10V ±20V