Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RJK1056DPB-00#J5
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3,376
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Renesas Electronics America MOSFET N-CH 100V 25A LFPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK 65W (Tc) N-Channel 100V 25A (Ta) 14 mOhm @ 12.5A, 10V - 41nC @ 10V 3000pF @ 10V 10V ±20V
STP24NF10
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1,091
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STMicroelectronics MOSFET N-CH 100V 26A TO-220 STripFET™ II Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 85W (Tc) N-Channel 100V 26A (Tc) 60 mOhm @ 12A, 10V 4V @ 250µA 41nC @ 10V 870pF @ 25V 10V ±20V
PSMN020-100YS,115
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3,820
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Nexperia USA Inc. MOSFET N-CH 100V 43A LFPAK - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 106W (Tc) N-Channel 100V 43A (Tc) 20.5 mOhm @ 15A, 10V 4V @ 1mA 41nC @ 10V 2210pF @ 50V 10V ±20V
PSMN020-100YS,115
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RFQ
3,322
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Nexperia USA Inc. MOSFET N-CH 100V 43A LFPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 106W (Tc) N-Channel 100V 43A (Tc) 20.5 mOhm @ 15A, 10V 4V @ 1mA 41nC @ 10V 2210pF @ 50V 10V ±20V
PSMN020-100YS,115
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RFQ
3,346
In-stock
Nexperia USA Inc. MOSFET N-CH 100V 43A LFPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 106W (Tc) N-Channel 100V 43A (Tc) 20.5 mOhm @ 15A, 10V 4V @ 1mA 41nC @ 10V 2210pF @ 50V 10V ±20V