Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTA18P10T
RFQ
VIEW
RFQ
1,420
In-stock
IXYS MOSFET P-CH 100V 18A TO-263 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 83W (Tc) P-Channel - 100V 18A (Tc) 120 mOhm @ 9A, 10V 4.5V @ 250µA 39nC @ 10V 2100pF @ 25V 10V ±15V
STL90N10F7
RFQ
VIEW
RFQ
2,549
In-stock
STMicroelectronics MOSFET N-CH 100V POWERFLAT5X6 DeepGATE™, STripFET™ VII Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN PowerFlat™ (5x6) 5W (Ta), 100W (Tc) N-Channel - 100V 70A (Tc) 10.5 mOhm @ 8A, 10V 4V @ 250µA 39nC @ 10V 3550pF @ 50V 10V ±20V
FQP17P10
RFQ
VIEW
RFQ
1,062
In-stock
ON Semiconductor MOSFET P-CH 100V 16.5A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 100W (Tc) P-Channel - 100V 16.5A (Tc) 190 mOhm @ 8.25A, 10V 4V @ 250µA 39nC @ 10V 1100pF @ 25V 10V ±30V
IXTY18P10T
RFQ
VIEW
RFQ
1,843
In-stock
IXYS MOSFET P-CH 100V 18A TO-252 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 83W (Tc) P-Channel - 100V 18A (Tc) 120 mOhm @ 9A, 10V 4.5V @ 250µA 39nC @ 10V 2100pF @ 25V 10V ±15V
IRF7853TRPBF
RFQ
VIEW
RFQ
800
In-stock
Infineon Technologies MOSFET N-CH 100V 8.3A 8-SOIC HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 100V 8.3A (Ta) 18 mOhm @ 8.3A, 10V 4.9V @ 100µA 39nC @ 10V 1640pF @ 25V 10V ±20V
IRF7853TRPBF
RFQ
VIEW
RFQ
1,318
In-stock
Infineon Technologies MOSFET N-CH 100V 8.3A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 100V 8.3A (Ta) 18 mOhm @ 8.3A, 10V 4.9V @ 100µA 39nC @ 10V 1640pF @ 25V 10V ±20V
IRF7853TRPBF
RFQ
VIEW
RFQ
2,472
In-stock
Infineon Technologies MOSFET N-CH 100V 8.3A 8-SOIC HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 100V 8.3A (Ta) 18 mOhm @ 8.3A, 10V 4.9V @ 100µA 39nC @ 10V 1640pF @ 25V 10V ±20V
IXTP18P10T
RFQ
VIEW
RFQ
1,613
In-stock
IXYS MOSFET P-CH 100V 18A TO-220 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 83W (Tc) P-Channel - 100V 18A (Tc) 120 mOhm @ 9A, 10V 4.5V @ 250µA 39nC @ 10V 2100pF @ 25V 10V ±15V